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TCR2EE125 PDF预览

TCR2EE125

更新时间: 2024-09-24 14:56:47
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
17页 1516K
描述
200 mA Fixed Output LDO Regulator, 1.25 V, SOT-553(ESV)

TCR2EE125 数据手册

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TCR2EF series, TCR2EE series  
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic  
TCR2EF series  
TCR2EE series  
200 mA CMOS Low Dropout Regulator with Fast Load Transient Response  
The TCR2EF and TCR2EE series are CMOS single output voltage  
regulators with an on/off control input, featuring low dropout voltage, low  
output noise voltage and fast load transient response.  
These voltage regulators are available in fixed output voltages between 1.0  
V and 5.0 V and capable of driving up to 200 mA. They feature overcurrent  
protection, an Auto-discharge function.  
The TCR2EF and TCR2EE series has a low dropout voltage of 180 mV  
(2.5 V output, IOUT = 150 mA) with low output noise voltage of 35 μVrms (2.5  
V output) and a load transient response of only VOUT = ±60 mV (IOUT  
1 mA150 mA, COUT = 1.0 μF).  
=
Thus, the TCR2EF and TCR2EE series are suitable for sensitive power  
supply such as Analog and RF applications.  
SMV  
ESV  
Features  
Low dropout voltage  
Weight :  
SMV (SOT-25)(SC-74A) : 16 mg ( typ.)  
VDO = 150 mV (typ.) at 3.0 V output, IOUT = 150 mA  
VDO = 180 mV (typ.) at 2.5 V output, IOUT = 150 mA  
VDO = 230 mV (typ.) at 1.8 V output, IOUT = 150 mA  
VDO = 380 mV (typ.) at 1.2 V output, IOUT = 150 mA  
VDO = 510 mV (typ.) at 1.0 V output, IOUT = 150 mA  
ESV (SOT-553)  
: 3.0 mg ( typ.)  
Low output noise voltage (VNO = 35 μV (typ.) at 2.5 V output, IOUT = 10 mA, 10 Hz < f < 100 kHz)  
rms  
Fast load transient response (VOUT = ±60 mV (typ.) at IOUT = 1 mA 150 mA, COUT =1.0 μF)  
Low quiescent bias current (IB = 35 μA (typ.) at IOUT = 0 mA)  
High ripple rejection ratio (73 dB (typ.) at 2.5 V output, IOUT = 10 mA, f = 1 kHz)  
Wide range output voltage line up (VOUT = 1.0 to 5.0 V)  
High VOUT accuracy ±1.0 % (1.8 V VOUT  
Overcurrent protection  
)
Auto-discharge  
Pull down connection between CONTROL and GND  
Ceramic capacitors can be used (CIN = 0.1 μF, COUT = 1.0 μF)  
Small package ESV (SOT-553) (1.6 mm x 1.6 mm x 0.55 mm)  
General package SMV (SOT-25) (2.8 mm x 2.9 mm x 1.1 mm)  
Start of commercial production  
2012-10  
© 2017-2019  
Toshiba Electronic Devices & Storage Corporation  
2019-06-20  
1

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