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TCD1012C

更新时间： 2024-11-18 19:07:07
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
1页 80K
描述
Silicon Surge Protector, 215V V(BO) Max, 50A

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TCD1012C 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：DISK BUTTON, O-MEDB-N2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.30.00.80
风险等级：5.92最大转折电压：215 V
配置：SINGLE最大断态直流电压：120 V
JESD-30 代码：O-MEDB-N2JESD-609代码：e0
通态非重复峰值电流：50 A元件数量：1
端子数量：2封装主体材料：METAL
封装形状：ROUND封装形式：DISK BUTTON
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
表面贴装：YES端子面层：TIN LEAD
端子形式：NO LEAD端子位置：END
处于峰值回流温度下的最长时间：NOT SPECIFIED触发设备类型：SILICON SURGE PROTECTOR
Base Number Matches：1

TCD1012C 数据手册

  
8700 E. Thomas Road  
Scottsdale, AZ 85252  
Tel: (480) 941-6300  
Fax: (480) 947-1503  
TSMBJ1005C  
thru  
TSMBJ1024CB  
FEATURES  
Bi-directional  
100 AMP  
•
•
•
•
•
•
•
•
•
Bidirectional Transient Voltage Protection  
Surge capabilities up to 100 Amps @ 10/1000 µs or 300 Amps @8/20 µs (note 2,5)  
Initial Breakdown Voltage from 60 to 300 volts  
Thyristor Surge  
Protective Devices  
(TSPD)  
Positive Resistance Breakover Voltages from 100 to 400 volts  
Clamping speeds of Nanoseconds and Oxide-Glass Passivated Junctions  
High Off-State Impedance (low leakage) and low on-state voltage (crowbar action)  
Encapsulating material meets UL 94VO requirements  
UL RECOGNIZED: Qualified to UL 497B File No. E152273  
Bellcore 1089 compliant add "B" suffix (TSMBJ1005CB - TSMBJ1024CB)  
MECHANICAL  
MAXIMUM RATINGS  
CHARACTERISTICS  
•
•
•
•
•
•
Operating Temperatures: -400C to +1500C  
Storage Temperature: -650C to +1500C  
CASE STYLE: SMBJ (DO-214AA)  
CASE STYLE: SMBG (DO-  
215AA)  
Repetitive Off-State Voltage (both directions): See Electrical Characteristics for VDRM  
Non-Repetitive Peak Impulse Current (IPP): 100 A @ 10/1000 µs or 300 A @ 8/20 µs  
Option: Bellcore 1089 compliant (IPP = 312.5 A @ 8/20 µs)  
Non-Repetitive Peak On-State Current (ITSM): @ 8.3 ms (one-half cycle); 60 Amps  
SMBJ  
SMBG  
MECHANICAL  
•
•
•
Lead solder temperature (10 sec duration) 260ºC  
Weight: 1.5 grams(approximate)  
Marked with logo and marking code  
PACKAGING  
•
•
Tape & Reel EIA Standard 481-1-A  
13 inch reel 2,500, pieces  
INCHES  
MILLIMETERS  
MIN/MAX  
MIN/MAX  
A
.077/.083  
.160/.180  
.130/1.55  
.205/.220  
.075/.095  
.235/.255  
.015/.030  
.030/.060  
1.96/2.10  
4.06/4.57  
3.30/3.94  
5.21/5.59  
1.91/2.41  
5.97/6.48  
0.38/0.76  
0.76/1.52  
B
C
D
E
F
Electrical Characteristics @ 25ºC  
Rated  
Repetitive  
Off-State  
Voltage  
Breakdown Breakover  
On-State  
Voltage  
Rated Peak  
Pulse Current  
100 Amps @  
10/1000 µs  
Off-State  
Leakage  
Current  
@ VDRM  
Voltage  
Voltage  
Capacitance  
(1 MHz)  
Product  
Marking  
Holding  
Current  
@I(BR)=1 mA  
@IT = 1 A  
G
H
(see note 3)  
(see note 3) (see note 1)  
(pulsed)  
Co  
@ 0v  
pF  
Co  
@ 50v  
pF  
MAX  
100  
100  
100  
100  
100  
100  
VDRM  
IDRM  
µA  
V(BR)  
V(BO)  
VT  
IH  
IH  
Part Number  
Marking  
VOLTS  
VOLTS  
VOLTS  
VOLTS  
mA  
mA  
LEAD FINISH: Solder Dip or Lead Tin Plate  
MAX  
50  
MAX  
MIN  
60  
MAX  
100  
110  
265  
300  
350  
400  
MAX  
3.5  
3.5  
3.5  
3.5  
3.5  
3.5  
MIN  
150  
150  
150  
150  
150  
150  
MAX  
750  
750  
750  
750  
750  
750  
MAX  
200  
200  
200  
200  
200  
200  
TSMBJ1005C  
TSMBJ1006C  
TSMBJ1016C  
TSMBJ1018C  
TSMBJ1022C  
TSMBJ1024C  
T1005C  
T1006C  
T1016C  
T1018C  
T1022C  
T1024C  
5
5
5
5
5
5
POLARITY: Bi-directional  
60  
70  
160  
180  
220  
240  
190  
220  
275  
300  
NOTES:  
1. For rise times less than 1 kV/ms. For very fast times up to 1 kV/µs, V(BO) will be 110% of V(BO) Max., The I(BO) is 750 mA.  
2. Critical rate of rise of On-State current is 100 A/µs Max.  
3. Maximum rate of rise of Off-State voltage VDRM that will not trigger device is 5 kV/µs (TJ = 70ºC).  
4. Breakdown voltage V(BR) has a positive temperature coefficient of + 0.1 %/ºC.  
MSC0107B.PDF  
ISO 9001 CERTIFIED  
REV F 7/31/01  
1

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