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TC7W125FULF(T PDF预览

TC7W125FULF(T

更新时间： 2024-01-14 19:42:41
品牌 Logo 应用领域
东芝 - TOSHIBA 驱动逻辑集成电路
页数 文件大小 规格书
6页 147K
描述
Bus Driver

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中文翻译

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TC7W125FULF(T 技术参数

生命周期：Active包装说明：,
Reach Compliance Code：unknown风险等级：5.66
逻辑集成电路类型：BUS DRIVERBase Number Matches：1

TC7W125FULF(T 数据手册

 浏览型号TC7W125FULF(T的Datasheet PDF文件第2页浏览型号TC7W125FULF(T的Datasheet PDF文件第3页浏览型号TC7W125FULF(T的Datasheet PDF文件第4页浏览型号TC7W125FULF(T的Datasheet PDF文件第5页浏览型号TC7W125FULF(T的Datasheet PDF文件第6页 
TC7W125FU  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
TC7W125FU  
Dual BUS Buffer  
2
The TC7W125FU is a high speed C MOS Dual BUS Buffers  
2
fabricated with silicon gate C MOS technology.  
It achieves the high speed operation similar to equivalent  
2
LSTTL while maintaining the C MOS low power dissipation.  
The require 3-state control input G to be set high to place the  
output into the high impedance.  
All inputs are equipped with protection circuits against static  
discharge or transient excess voltage.  
Weight: 0.02 g (typ.)  
Features  
•
•
•
•
•
•
•
High speed: t = 10 ns (typ.) at V  
= 5 V  
pd  
CC  
Low power dissipation: I  
= 2 μA (max) at Ta = 25°C  
CC  
High noise immunity: V  
= V  
= 28% V  
(min)  
NIH  
NIL  
CC  
Output drive capability: 15 LSTTL loads  
Symmetrical output impedance: |I | = I  
= 6 mA (min)  
OL  
OH  
∼
−
Balanced propagation delays: t  
t
pHL  
pLH  
Wide operating voltage range: V  
(opr) = 2 to 6 V  
CC  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Supply voltage range  
Symbol  
Rating  
Unit  
V
−0.5 to 7  
V
V
CC  
DC input voltage  
V
−0.5 to V  
+ 0.5  
IN  
CC  
CC  
DC output voltage  
Input diode current  
Output diode current  
DC output current  
V
−0.5 to V  
+ 0.5  
V
OUT  
I
±20  
mA  
mA  
mA  
mA  
mW  
°C  
IK  
I
±20  
±35  
OK  
I
OUT  
DC V /ground current  
CC  
I
±37.5  
300  
CC  
Power dissipation  
P
D
Storage temperature range  
Lead temperature (10 s)  
T
stg  
−65 to 150  
T
L
260  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if  
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Start of commercial production  
1993-04  
1
2014-03-01  
123456

中文翻译

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