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TC7SU04FLFT PDF预览

TC7SU04FLFT

更新时间: 2024-11-20 15:53:59
品牌 Logo 应用领域
东芝 - TOSHIBA 输入元件光电二极管逻辑集成电路
页数 文件大小 规格书
7页 355K
描述
HC/UH SERIES, 1-INPUT INVERT GATE, PDSO5

TC7SU04FLFT 技术参数

生命周期:Active包装说明:LSSOP,
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.67系列:HC/UH
JESD-30 代码:R-PDSO-G5长度:2.9 mm
逻辑集成电路类型:INVERTER功能数量:1
输入次数:1端子数量:5
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:LSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
传播延迟(tpd):125 ns座面最大高度:1.4 mm
最大供电电压 (Vsup):6 V最小供电电压 (Vsup):2 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.95 mm端子位置:DUAL
宽度:1.6 mmBase Number Matches:1

TC7SU04FLFT 数据手册

 浏览型号TC7SU04FLFT的Datasheet PDF文件第2页浏览型号TC7SU04FLFT的Datasheet PDF文件第3页浏览型号TC7SU04FLFT的Datasheet PDF文件第4页浏览型号TC7SU04FLFT的Datasheet PDF文件第5页浏览型号TC7SU04FLFT的Datasheet PDF文件第6页浏览型号TC7SU04FLFT的Datasheet PDF文件第7页 
TC7SU04F/FU  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
TC7SU04F, TC7SU04FU  
Inverter  
2
The TC7SU04 is a high speed C MOS Inverter fabricated with  
silicon gate C MOS technology.  
TC7SU04F  
2
It achieves high speed operation similar to equivalent LSTTL  
2
while maintaining the C MOS low power dissipation.  
The internal circuit is composed of single stages inverter, it can  
be applied for crystal oscillation.  
The input is equipped with protection circuits against static  
discharge or transient excess voltage.  
Output currents are 1/2 compared to TC74HC series models.  
(SMV)  
TC7SU04FU  
Features  
High speed: t = 7 ns (typ.) at V  
= 5 V  
pd  
CC  
Low power dissipation: I  
= 1 μA (max) at Ta = 25°C  
CC  
High noise immunity: V  
= V  
= 10% V  
(min)  
NIH  
NIL  
CC  
Output drive capability: 5 LSTTL loads  
Symmetrical output impedance: |I | = I  
= 2 mA (min)  
OL  
OH  
Balanced propagation delay time: t  
t
pHL  
(USV)  
pLH  
Wide operating voltage range: V  
(opr) = 2 to 6 V  
CC  
Weight  
SSOP5-P-0.95: 0.016 g (typ.)  
SSOP5-P-0.65A: 0.006 g (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Supply voltage range  
Symbol  
Rating  
Unit  
V
0.5 to 7  
V
V
CC  
DC input voltage  
V
0.5 to V  
+ 0.5  
IN  
CC  
CC  
DC output voltage  
Input diode current  
Output diode current  
DC output current  
V
0.5 to V  
+ 0.5  
V
OUT  
I
±20  
mA  
mA  
mA  
mA  
mW  
°C  
IK  
I
±20  
±12.5  
±25  
OK  
I
OUT  
DC V /ground current  
CC  
I
CC  
Power dissipation  
P
200  
D
Storage temperature range  
Lead temperature (10 s)  
T
stg  
65 to 150  
T
L
260  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if  
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Start of commercial production  
1987-09  
1
2014-05-12  

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