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TC7SG08FE_09 PDF预览

TC7SG08FE_09

更新时间: 2022-03-18 03:35:13
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
6页 170K
描述
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7SG08FE_09 数据手册

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TC7SG08FE  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
TC7SG08FE  
2-Input AND Gate  
Features  
High output current: ±8 mA (min) at V  
= 3.0 V  
CC  
Super high speed operation: t = 2.5 ns (typ.)  
pd  
at V  
= 3.3 V,15pF  
CC  
Operating voltage range:  
5.5-V tolerant inputs  
V
= 0.9 to 3.6 V  
CC  
3.6-V power down protection output  
(ESV)  
Weight: 0.003 g (typ.)  
Marking  
Pin Assignment (top view)  
Product Name  
IN B  
IN A  
GND  
1
2
3
5
4
V
CC  
W 2  
OUT Y  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Supply voltage  
Symbol  
Rating  
Unit  
V
0.5 to 4.6  
V
V
CC  
DC input voltage  
V
0.5 to 7.0  
IN  
0.5 to 4.6 (Note 1)  
DC output voltage  
V
V
OUT  
0.5 to V  
+ 0.5 (Note 2)  
CC  
20  
20  
Input diode current  
Output diode current  
DC output current  
I
mA  
mA  
mA  
mA  
mW  
°C  
IK  
I
(Note 3)  
OK  
I
±25  
±50  
50  
OUT  
DC V /ground current  
CC  
I
CC  
Power dissipation  
P
D
Storage temperature  
T
65 to 150  
stg  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if  
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Note 1:  
V
CC=0V  
Note 2: High or Low state. Do not exceed IOUT of absolute maximum ratings.  
Note 3: VOUT<GND  
2009-09-09  
1

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