Datasheet > TC7SG02FE_09

TC7SG02FE_09

更新时间： 2022-03-18 01:08:30

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	150K
描述
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

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TC7SG02FE_09 数据手册

TC7SG02FE

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7SG02FE

2-Input NOR Gate

Features

•

High output current

: ±8 mA (min) at V

= 3.0 V

Super high speed operation : t = 2.4 ns (typ.)

at V

= 3.3 V,15pF

•

Operating voltage range

5.5-V tolerant inputs

: V

= 0.9 to 3.6 V

3.6-V power down protection output

(ESV)

Weight: 0.003 g (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Marking

Product Name

Characteristics

Supply voltage

Symbol

Rating

Unit

W 3

−0.5 to 4.6

DC input voltage

−0.5 to 7.0

−0.5 to 4.6 (Note 1)

DC output voltage

OUT

−0.5 to V

+ 0.5 (Note 2)

Input diode current

Output diode current

DC output current

−20

Pin Assignment (top view)

−20

±25

±50

150

(Note 3) mA

°C

OUT

IN B

IN A

GND

DC V /ground current

Power dissipation

Storage temperature

stg

−65 to 150

OUT Y

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Note 1: V_CC= 0V

Note 2: High or Low state. Do not exceed I_OUTof absolute maximum ratings.

Note 3: V_OUT< GND

2009-09-09

12 3 4 5 6

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