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TC7PA17FU PDF预览

TC7PA17FU

更新时间: 2024-11-30 04:00:27
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
8页 184K
描述
Dual Schmitt Buffer

TC7PA17FU 技术参数

是否Rohs认证: 不符合生命周期:Lifetime Buy
零件包装代码:SSOP包装说明:TSSOP, TSSOP6,.08
针数:6Reach Compliance Code:unknown
HTS代码:8542.39.00.01风险等级:5.65
系列:ALVC/VCX/AJESD-30 代码:R-PDSO-G6
JESD-609代码:e0长度:2 mm
负载电容(CL):30 pF逻辑集成电路类型:BUFFER
最大I(ol):0.006 A功能数量:2
输入次数:1端子数量:6
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP6,.08封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH电源:2/3.3 V
Prop。Delay @ Nom-Sup:8.6 ns传播延迟(tpd):8.6 ns
认证状态:Not Qualified施密特触发器:YES
座面最大高度:1.1 mm子类别:Gates
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN LEAD端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
宽度:1.25 mmBase Number Matches:1

TC7PA17FU 数据手册

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TC7PA17FU  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
TC7PA17FU  
Dual Schmitt Buffer  
Features  
Operating voltage range: V  
= 1.8~3.6 V  
CC  
High-speed operation: t = 4.0 ns (max) at V  
= 3.0~3.6 V  
= 2.3~2.7 V  
= 1.8 V  
pd  
CC  
CC  
CC  
t
t
= 4.3 ns (max) at V  
= 8.6 ns (max) at V  
pd  
pd  
High-level output current:  
I
I
I
/I = ±24 mA (min) at V  
= 3.0 V  
= 2.3 V  
OH OL  
CC  
/I = ±18 mA (min) at V  
OH OL  
CC  
/I = ±6 mA (min) at V  
= 1.8 V  
OH OL  
CC  
3.6-V tolerant inputs  
3.6-V power down protection outputs  
Weight: 0.0068 g (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Marking  
Characteristics  
Power supply voltage  
Symbol  
Value  
Unit  
Product name  
V
0.5~4.6  
0.5~4.6  
V
V
CC  
DC input voltage  
V
IN  
E A L  
0.5~4.6 (Note 1)  
DC output voltage  
V
V
OUT  
0.5~V  
+ 0.5  
CC  
(Note 2)  
Input diode current  
Output diode current  
DC output current  
Power dissipation  
I
50  
mA  
mA  
mA  
mW  
mA  
°C  
IK  
Pin Assignment (top view)  
I
50 (Note 3)  
±50  
OK  
I
OUT  
1Y  
1A  
6
1
2
3
P
200  
D
DC V /ground current  
CC  
I
±100  
CC  
GND  
2A  
VCC  
2Y  
5
4
Storage temperature  
T
stg  
65~150  
Note:  
Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature,  
etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating  
Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1:  
V
CC  
= 0 V  
Note 2: High or Low state. I  
absolute maximum rating must be observed.  
OUT  
Note 3:  
V
OUT  
< GND  
2007-11-01  
1

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