Datasheet > TC74HC30AP_07

TC74HC30AP_07

更新时间： 2024-11-16 05:04:11

品牌	Logo	应用领域
东芝 - TOSHIBA		栅
页数	文件大小	规格书
8页	253K
描述
CMOS Digital Integrated Circuit Silicon Monolithic 8-Input NAND Gate

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中文翻译

获取价格

数据手册

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TC74HC30AP_07 数据手册

TC74HC30AP/AF/AFN

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC74HC30AP,TC74HC30AF,TC74HC30AFN

8-Input NAND Gate

Note: xxxFN (JEDEC SOP) is not available in

Japan.

The TC74HC30A is a high speed CMOS 8-INPUT NAND

GATE fabricated with silicon gate C²MOS technology.

It achieves the high speed operation similar to equivalent

LSTTL while maintaining the CMOS low power dissipation.

The internal circuit is composed of 5 stages including buffer

output, which provide high noise immunity and stable output.

All inputs are equipped with protection circuits against static

discharge or transient excess voltage.

TC74HC30AP

TC74HC30AF

TC74HC30AFN

Features

•

High speed: t = 12 ns (typ.) at V

= 5 V

Low power dissipation: I

= 1 μA (max) at Ta = 25°C

High noise immunity: V

= V

= 28% V

(min)

NIH

NIL

Output drive capability: 10 LSTTL loads

Symmetrical output impedance: |I | = I

= 4 mA (min)

∼

−

Balanced propagation delays: t

pHL

pLH

•

Wide operating voltage range: V

(opr) = 2 to 6 V

•

Pin and function compatible with 74LS30

Pin Assignment

Weight

DIP14-P-300-2.54

SOP14-P-300-1.27A

SOL14-P-150-1.27

: 0.96 g (typ.)

: 0.18 g (typ.)

: 0.12 g (typ.)

NC: No connection

IEC Logic Symbol

2007-10-01

12 3 4 5 6 7 8

中文翻译

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