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TC4427VMF713 PDF预览

TC4427VMF713

更新时间： 2024-11-18 03:09:55
品牌 Logo 应用领域
美国微芯 - MICROCHIP 驱动器MOSFET驱动器驱动程序和接口接口集成电路光电二极管
页数 文件大小 规格书
20页 431K
描述
1.5A Dual High-Speed Power MOSFET Drivers

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中文翻译

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TC4427VMF713 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：QFN
包装说明：HVSON, SOLCC8,.25针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01Factory Lead Time：8 weeks
风险等级：5Is Samacsys：N
高边驱动器：YES接口集成电路类型：BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码：R-PDSO-N8JESD-609代码：e3
长度：6 mm湿度敏感等级：3
功能数量：2端子数量：8
最高工作温度：125 °C最低工作温度：-40 °C
标称输出峰值电流：1.5 A封装主体材料：PLASTIC/EPOXY
封装代码：HVSON封装等效代码：SOLCC8,.25
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度（摄氏度）：260电源：4.5/18 V
认证状态：Not Qualified座面最大高度：0.95 mm
子类别：MOSFET Drivers最大供电电压：18 V
最小供电电压：4.5 V表面贴装：YES
技术：CMOS温度等级：AUTOMOTIVE
端子面层：Matte Tin (Sn)端子形式：NO LEAD
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：40断开时间：0.06 µs
接通时间：0.04 µs宽度：5 mm
Base Number Matches：1

TC4427VMF713 数据手册

 浏览型号TC4427VMF713的Datasheet PDF文件第2页浏览型号TC4427VMF713的Datasheet PDF文件第3页浏览型号TC4427VMF713的Datasheet PDF文件第4页浏览型号TC4427VMF713的Datasheet PDF文件第5页浏览型号TC4427VMF713的Datasheet PDF文件第6页浏览型号TC4427VMF713的Datasheet PDF文件第7页 
TC4426/TC4427/TC4428  
1.5A Dual High-Speed Power MOSFET Drivers  
General Description:  
Features:  
• High Peak Output Current – 1.5A  
• Wide Input Supply Voltage Operating Range:  
- 4.5V to 18V  
The TC4426/TC4427/TC4428 are improved versions  
of the earlier TC426/TC427/TC428 family of MOSFET  
drivers. The TC4426/TC4427/TC4428 devices have  
matched rise and fall times when charging and  
discharging the gate of a MOSFET.  
• High Capacitive Load Drive Capability – 1000 pF  
in 25 ns (typ.)  
These devices are highly latch-up resistant under any  
conditions within their power and voltage ratings. They  
are not subject to damage when up to 5V of noise spik-  
ing (of either polarity) occurs on the ground pin. They  
can accept, without damage or logic upset, up to  
500 mA of reverse current (of either polarity) being  
forced back into their outputs. All terminals are fully  
protected against Electrostatic Discharge (ESD) up to  
4 kV.  
• Short Delay Times – 40 ns (typ.)  
• Matched Rise and Fall Times  
• Low Supply Current:  
- With Logic ‘1’ Input – 4 mA  
- With Logic ‘0’ Input – 400 μA  
• Low Output Impedance – 7Ω  
• Latch-Up Protected: Will Withstand 0.5A Reverse  
Current  
The TC4426/TC4427/TC4428 MOSFET drivers can  
easily charge/discharge 1000 pF gate capacitances in  
under 30 ns. These devices provide low enough  
impedances in both the on and off states to ensure the  
MOSFET’s intended state will not be affected, even by  
large transients.  
• Input Will Withstand Negative Inputs Up to 5V  
• ESD Protected – 4 kV  
• Pin-compatible with the TC426/TC427/TC428  
• Space-saving 8-Pin MSOP and 8-Pin 6x5 DFN  
Packages  
Other compatible drivers are the TC4426A/TC4427A/  
TC4428A family of devices. The TC4426A/TC4427A/  
TC4428A devices have matched leading and falling  
edge input-to-output delay times, in addition to the  
matched rise and fall times of the TC4426/TC4427/  
TC4428 devices.  
Applications:  
• Switch Mode Power Supplies  
• Line Drivers  
• Pulse Transformer Drive  
Package Types  
8-Pin MSOP/  
PDIP/SOIC TC4426 TC4427 TC4428  
8-Pin DFN(1) TC4426 TC4427 TC4428  
NC  
NC 1  
IN A 2  
GND 3  
IN B 4  
8
7
6
5
NC  
NC  
1
2
3
4
8
7
6
5
NC  
IN A  
GND  
IN B  
NC  
NC  
NC  
TC4426  
TC4427  
TC4428  
OUT A  
OUT A  
OUT A  
TC4426  
TC4427  
TC4428  
OUT A  
OUT A  
OUT A  
V
V
V
DD  
DD  
DD  
V
OUT B  
V
V
OUT B  
OUT B  
DD  
DD  
DD  
OUT B  
OUT B  
OUT B  
Note 1: Exposed pad of the DFN package is electrically isolated.  
© 2006 Microchip Technology Inc.  
DS21422D-page 1  
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TC4427VMF713 替代型号

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