是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | DIP, DIP8,.3 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | Factory Lead Time: | 13 weeks |
风险等级: | 7.52 | Is Samacsys: | N |
高边驱动器: | YES | 接口集成电路类型: | BUFFER OR INVERTER BASED MOSFET DRIVER |
JESD-30 代码: | R-GDIP-T8 | JESD-609代码: | e1 |
长度: | 9.78 mm | 功能数量: | 1 |
端子数量: | 8 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 标称输出峰值电流: | 9 A |
封装主体材料: | CERAMIC, GLASS-SEALED | 封装代码: | DIP |
封装等效代码: | DIP8,.3 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 4.5/18 V | 认证状态: | Not Qualified |
座面最大高度: | 5.08 mm | 子类别: | MOSFET Drivers |
最大供电电压: | 18 V | 最小供电电压: | 4.5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | MILITARY | 端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
断开时间: | 0.08 µs | 接通时间: | 0.08 µs |
宽度: | 7.62 mm | Base Number Matches: | 1 |
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