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TC3879 PDF预览

TC3879

更新时间: 2024-11-21 03:28:47
品牌 Logo 应用领域
全讯科技 - TRANSCOM /
页数 文件大小 规格书
2页 58K
描述
7 W Packaged Single-Bias PHEMT GaAs Power FETs

TC3879 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.78
Base Number Matches:1

TC3879 数据手册

 浏览型号TC3879的Datasheet PDF文件第2页 
TC3879  
PRE1_20070518  
Preliminary  
7 W Packaged Single-Bias PHEMT GaAs Power FETs  
FEATURES  
PHOTO ENLARGEMENT  
7W Typical Output Power  
10.5dB Typical Linear Power Gain at 2.45 GHz  
High Linearity: IP3 = 48.5 dBm Typical  
High Power Added Efficiency: Nominal PAE of 35%  
Breakdown Voltage: BVDGO 18V  
100 % DC Tested  
Suitable for High Reliability Application  
DESCRIPTION  
The TC3879 is a self-bias flange ceramic packaged device with PHEMT GaAs FETs, which is designed to  
provide the single power supply. The flange ceramic package provides excellent thermal conductivity for the  
GaAs FET. The device is suitable for oscillators and power amplifiers in a wide range of commercial application.  
All devices are 100% DC tested to assure consistent quality.  
ELECTRICAL SPECIFICATIONS (@ 2.45 GHz)  
MIN  
TYP  
38.5  
10.5  
48.5  
35  
MAX  
UNIT  
dBm  
dB  
Symbol  
P1dB  
GL  
CONDITIONS  
Output Power at 1dB Gain Compression Point VDS = 10 V  
Linear Power Gain VDS = 10 V  
Intercept Point of the 3rd-order Intermodulation VDS = 10 V, *PSCL = 27 dBm  
Power Added Efficiency at 1dB Compression Power  
Drain-Source Current at VDS = 10 V  
dBm  
%
IP3  
PAE  
IDS  
1750  
22  
mA  
18  
Volts  
°C/W  
BVDGO Drain-Gate Breakdown Voltage at IDGO = 7.5mA  
Rth Thermal Resistance  
Note: *PSCL: Output Power of Single Carrier Level.  
1.8  
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.  
Web-Site: www.transcominc.com.tw  
Phone: 886-6-5050086  
P 1 / 2  
Fax: 886-6-5051602  

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