TC1313
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
IN - AGND......................................................................6.0V
All Other I/O ...............................(AGND - 0.3V) to (VIN + 0.3V)
LX to PGND...............................................-0.3V to (VIN + 0.3V)
P
GND to AGND ..................................................-0.3V to +0.3V
Output Short Circuit Current ................................Continuous
Power Dissipation (Note 7)..........................Internally Limited
Storage temperature .....................................-65°C to +150°C
Ambient Temp. with Power Applied ................-40°C to +85°C
Operating Junction Temperature...................-40°C to +125°C
ESD protection on all pins (HBM) ....................................... 3 kV
DC CHARACTERISTICS
Electrical Characteristics: VIN1 = VIN2 = SHDN1,2 = 3.6V, COUT1 = CIN = 4.7 µF, COUT2 = 1µF, L = 4.7 µH, VOUT1 (ADJ) = 1.8V,
OUT1 = 100 ma, IOUT2 = 0.1 mA TA = +25°C. Boldface specifications apply over the TA range of -40°C to +85°C.
I
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input/Output Characteristics
Input Voltage
VIN
2.7
500
300
—
—
—
5.5
—
—
1
V
Note 1, Note 2, Note 8
Note 1
Maximum Output Current
Maximum Output Current
IOUT1_MAX
IOUT2_MAX
IIN_SHDN
mA
mA
µA
—
Note 1
Shutdown Current
0.05
SHDN1 = SHDN2 = GND
Combined VIN1 and VIN2 Current
Operating IQ
IQ
—
57
100
µA
SHDN1 = SHDN2 = VIN2
IOUT1 = 0 mA, IOUT2 = 0 mA
Synchronous Buck IQ
LDO IQ
—
—
38
44
—
—
µA
µA
SHDN1 = VIN, SHDN2 = GND
SHDN1 = GND, SHDN2 = VIN2
Shutdown/UVLO/Thermal Shutdown Characteristics
SHDN1,SHDN2,
Logic Input Voltage Low
VIL
VIH
IIN
—
—
—
15
—
%VIN
%VIN
µA
VIN1 = VIN2 = 2.7V to 5.5V
VIN1 = VIN2 = 2.7V to 5.5V
SHDN1,SHDN2,
Logic Input Voltage High
45
SHDN1,SHDN2,
Input Leakage Current
-1.0
±0.01
1.0
VIN1 = VIN2 = 2.7V to 5.5V
SHDNX = GND
SHDNY = VIN
Thermal Shutdown
TSHD
TSHD-HYS
UVLO
—
—
165
10
—
—
°C
°C
V
Note 6, Note 7
Thermal Shutdown Hysteresis
Undervoltage Lockout
2.4
2.55
2.7
VIN1 Falling
(VOUT1 and VOUT2
)
Undervoltage Lockout Hysteresis UVLO-HYS
—
200
—
mV
Note 1: The Minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ VRX + VDROPOUT, VRX = VR1 or VR2
2: RX is the regulator output voltage setting.
3: TCVOUT2 = ((VOUT2max – VOUT2min) * 106)/(VOUT2 * DT).
.
V
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current.
5: Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its
nominal value measured at a 1V differential.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air. (i.e. TA, TJ, θJA). Exceeding the maximum allowable power
dissipation causes the device to initiate thermal shutdown.
7: The integrated MOSFET switches have an integral diode from the LX pin to VIN, and from LX to PGND. In cases where
these diodes are forward-biased, the package power dissipation limits must be adhered to. Thermal protection is not
able to limit the junction temperature for these cases.
8:
VIN1 and VIN2 are supplied by the same input source.
© 2009 Microchip Technology Inc.
DS21974B-page 5
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