Datasheet > TBS30M

TBS30M

更新时间： 2024-01-30 04:02:22

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
3页	354K
描述
3.0 Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts

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中文翻译

获取价格

数据手册

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TBS30M 数据手册

M C C

TBS30A

THRU

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

Micro Commercial Components

TBS30M

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Features

3.0 Amp Single Phase

Glass Passivated

Bridge Rectifier

•

Glass passivated chip

•

High surge forward current capability

Halogen free available upon request by adding suffix "-HF"

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1

Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates

50 to 1000 Volts

Compliant. See ordering information)

Mechanical Data

TBS

•

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

MCC

Part

Number

Maximum

Recurrent

Marking Peak Reverse

Voltage

Maximum

RMS

Voltage

Maximum

Blocking

Voltage

50V

100V

200V

Device

TBS30A

TBS30B

TBS30D

TBS30G

TBS30J

TBS30K

TBS30M

50V

100V

200V

400V

600V

800V

1000V

35V

70V

140V

280V

420V

TBS30A

TBS30B

TBS30D

TBS30G

TBS30J

TBS30K

TBS30M

400V

600V

560V

700V

800V

1000V

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Average Forward

Current

I_F(AV)

3.0 A

95A

Tc=70℃

Peak Forward Surge

Current

Maximum

Instantaneous

Forward Voltage

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

I_FSM

8.3ms, half sine

ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ

I_FM= 1.5A;

T_A= 25^OC

V_F

0.95V

ꢇꢃꢅ

ꢐ ꢐ ꢐ ꢐ ꢁꢄꢑ

ꢂꢂ

ꢀꢁꢂ

ꢈ

ꢂꢁꢄ

.311

.283

ꢂꢈꢉ

.339

.291

ꢂꢁꢄ

7.90

7.20

ꢂꢈꢉ

8.60

7.40

ꢄꢆꢊꢃ

^OC

ꢋ

I_R

5μA

T_j= 25

ꢃ

ꢌ

.256

.197

.051

.011

.037

.264

.205

.059

.016

.045

6.50

5.00

1.30

0.27

0.95

6.70

5.20

1.50

0.40

1.15

^OC

T_j= 125

5 00μA

55^O^C/W

10^O^C/W

ꢍ

Typical Thermal

Resistance

thJA

ꢇ

ꢎ

.028

.114

.0015

.041

.122

.003

0.70

2.90

0.04

1.05

3.10

0.08

R_thJC

R_thJL

^OC

ꢏ

15 /W

Rating For Fusing

I²t

33A²s

t<8.30ms

Mounting Pad Layout

Dimensions in inches and (millimeters)

Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7

.280(7.10

)

.079(2.00)

.071(1.80)

.360(9.15)

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2017/02/08

Revision:B

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中文翻译

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与TBS30M相关器件

型号	品牌	获取价格	描述	数据表
TBS430250HDH	POWEREX	获取价格	Silicon Controlled Rectifier, 4202A I(T)RMS, 3000V V(DRM), 3000V V(RRM), 1 Element, HERMET
TBS432250HDH	POWEREX	获取价格	Silicon Controlled Rectifier, 4202A I(T)RMS, 3200V V(DRM), 3200V V(RRM), 1 Element, HERMET
TBS434250HDH	POWEREX	获取价格	Silicon Controlled Rectifier, 4202A I(T)RMS, 3400V V(DRM), 3400V V(RRM), 1 Element, HERMET
TBS436250HDH	POWEREX	获取价格	Silicon Controlled Rectifier, 4202A I(T)RMS, 3600V V(DRM), 3600V V(RRM), 1 Element, HERMET
TBS6416B4E	ETC	获取价格	1M x 16Bit x 4 Banks synchronous DRAM
TBS6416B4E-7G	ETC	获取价格	1M x 16Bit x 4 Banks synchronous DRAM
TBS7013502DH	POWEREX	获取价格	Silicon Controlled Rectifier, 5495A I(T)RMS, 100V V(RRM), 1 Element, TBS, 3 PIN
TBS7013504DH	POWEREX	获取价格	Silicon Controlled Rectifier, 5495A I(T)RMS, 100V V(RRM), 1 Element, TBS, 3 PIN
TBS7013505DH	POWEREX	获取价格	Silicon Controlled Rectifier, 5495A I(T)RMS, 100V V(RRM), 1 Element, TBS, 3 PIN
TBS7013506DH	POWEREX	获取价格	Silicon Controlled Rectifier, 5495A I(T)RMS, 100V V(RRM), 1 Element, TBS, 3 PIN

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