Datasheet > TBS6416B4E-7G

TBS6416B4E-7G

更新时间： 2024-01-17 16:45:32

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
8页	225K
描述
1M x 16Bit x 4 Banks synchronous DRAM

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TBS6416B4E-7G 数据手册

.tec

TBS6416B4E

1M x 16Bit x 4 Banks synchronous DRAM

GENERAL DESCRIPTION

The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,

fabricated with M’tec high performance CMOS technology. Synchronous design allows precise cycle control with the use of

system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and

programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system

applications.

FEATURES

• JEDEC standard 3.3V power supply

• LVTTL compatible with multiplexed address

• Four-banks operation

• MRS cycle with address key programs

-. CAS latency (2 & 3)

-. Burst length (1, 2, 4, 8 & Full page)

-. Burst type (Sequential & Interleave)

• All inputs are sampled at the positive going edge of the system clock.

• Burst read single-bit write operation

• DQM for masking

• Auto & self refresh

• 64ms refresh period (4K cycle)

ORDERING INFORMATION

Part No.

Max Freq.

143MHz

Interface

LVTTL

Package

TBS6416B4E-7G

TSOP(II)

Revision_1.1

1 TwinMOS Technologies Inc. Sep. 2000

12 3 4 5 6 7 8

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型号	品牌	获取价格	描述	数据表
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TBS7013504DH	POWEREX	获取价格	Silicon Controlled Rectifier, 5495A I(T)RMS, 100V V(RRM), 1 Element, TBS, 3 PIN
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TBS701350GDH	POWEREX	获取价格	Silicon Controlled Rectifier, 5495A I(T)RMS, 100V V(RRM), 1 Element, TBS, 3 PIN
TBS701350HDH	POWEREX	获取价格	Silicon Controlled Rectifier, 5495A I(T)RMS, 100V V(RRM), 1 Element, TBS, 3 PIN
TBS701350KDH	POWEREX	获取价格	Silicon Controlled Rectifier, 5495A I(T)RMS, 100V V(RRM), 1 Element, TBS, 3 PIN
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