是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | DISK BUTTON, O-CXDB-X3 |
针数: | 3 | Reach Compliance Code: | unknown |
HTS代码: | 8541.30.00.80 | 风险等级: | 5.75 |
Is Samacsys: | N | 配置: | SINGLE |
最大直流栅极触发电流: | 250 mA | JESD-30 代码: | O-CXDB-X3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | ROUND |
封装形式: | DISK BUTTON | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 最大均方根通态电流: | 4202 A |
断态重复峰值电压: | 3200 V | 重复峰值反向电压: | 3200 V |
表面贴装: | YES | 端子形式: | UNSPECIFIED |
端子位置: | UNSPECIFIED | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TBS434250HDH | POWEREX |
获取价格 |
Silicon Controlled Rectifier, 4202A I(T)RMS, 3400V V(DRM), 3400V V(RRM), 1 Element, HERMET |
![]() |
TBS436250HDH | POWEREX |
获取价格 |
Silicon Controlled Rectifier, 4202A I(T)RMS, 3600V V(DRM), 3600V V(RRM), 1 Element, HERMET |
![]() |
TBS6416B4E | ETC |
获取价格 |
1M x 16Bit x 4 Banks synchronous DRAM |
![]() |
TBS6416B4E-7G | ETC |
获取价格 |
1M x 16Bit x 4 Banks synchronous DRAM |
![]() |
TBS7013502DH | POWEREX |
获取价格 |
Silicon Controlled Rectifier, 5495A I(T)RMS, 100V V(RRM), 1 Element, TBS, 3 PIN |
![]() |
TBS7013504DH | POWEREX |
获取价格 |
Silicon Controlled Rectifier, 5495A I(T)RMS, 100V V(RRM), 1 Element, TBS, 3 PIN |
![]() |
TBS7013505DH | POWEREX |
获取价格 |
Silicon Controlled Rectifier, 5495A I(T)RMS, 100V V(RRM), 1 Element, TBS, 3 PIN |
![]() |
TBS7013506DH | POWEREX |
获取价格 |
Silicon Controlled Rectifier, 5495A I(T)RMS, 100V V(RRM), 1 Element, TBS, 3 PIN |
![]() |
TBS7013507DH | POWEREX |
获取价格 |
Silicon Controlled Rectifier, 5495A I(T)RMS, 100V V(RRM), 1 Element, TBS, 3 PIN |
![]() |
TBS701350FDH | POWEREX |
获取价格 |
Silicon Controlled Rectifier, 5495A I(T)RMS, 100V V(RRM), 1 Element, TBS, 3 PIN |
![]() |