Datasheet > TBL150P06D

TBL150P06D

更新时间： 2024-04-09 19:00:37

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	691K
描述
78A, 60V, 187W, P Channel, Power MOSFETs

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TBL150P06D 数据手册

P-Channel Enhancement Mode MOSFET

TBL150P06D

Electrical Characteristics (@ T_C= 25°C unless otherwise specified)

Symbol

Parameter

Test Condition

Min. Typ. Max. Unit

Static Characteristics

V_DSS

I_DSS

I_GSS

Drain-Source Breakdown Voltage

V_GS= 0V, I_D= -250μA

V_DS= -60V, V_GS= 0V

V_GS= ±20V, V_DS= 0V

-60

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

-1

μA

±1 00

On Characteristics ^*2

V_GS= -10V,I_D= -20A

V_GS= -4.5V,I_D= -20A

V_DS= V_GS, I_D= -250 μA

V_GS= 0V, f = 1MHz

-2.5

mΩ

R_DS(ON)

Static Drain-Source On-resistance

V_GS(th)

R_G

Gate Threshold Voltage

Gate Resistance

-1

-1.7

3.2

Dynamic Characteristics

g_fs

Forward Transconductance

V_DS= -5V, I_D= -20A

5007

337

246

C_ISS

C_OSS

C_RSS

Input Capacitance

V_GS= 0V

Output Capacitance

V_DS= -30V

f = 1.0MHz

Reverse Transfer Capacitance

Switching Characteristics

t_d(ON)

t_r

t_d(OFF)

t_f

Turn-on Delay Time ^*3

Turn-on Rise Time ^*3

Turn-Off Delay Time ^*3

Turn-Off Fall Time ^*3

Total Gate-Charge

V_DD=-30V

V_GS= -10V

R_G= 3Ω

R_L= 1.5Ω

Q_G

V_DD= -30V

V_GS= -10V

I_D= -20A

Q_GS

Q_GD

Gate to Source Charge

Gate to Drain (Miller) Charge

15.7

15.8

Source-Drain Diode Characteristics

V_SD

trr

Diode Forward Voltage ^*2

Reverse Recovery Time

Reverse Recovery Charge

I_SD= -20A, V_GS= 0V, T_J= 25°C

-0.8

-1.2

I_F= -20A, V_GS= 0V

d_IF/d_t= 100A/us

Qrr

Notes:

1. Surface mounted on 1 inch²FR-4 board with 2OZ copper

2. The data tested by pulsed, pulse width ≤ 300μs, duty cycle ≤ 2%

3. Guaranteed by design, not subject to production

4. E_AScondition: T_J= 25°C , V_DD= -30V, V_GS= -10V, L = 0.5mH, R_G= 25Ω

MTM1008A: December 2022 [2.0]

www.gmesemi.com

123 4 5

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