Datasheet > TBL200N15TH-5DL8

TBL200N15TH-5DL8

更新时间： 2024-09-18 17:02:15

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	445K
描述
50A, 150V, 113W, N Channel, Power MOSFETs

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数据手册

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TBL200N15TH-5DL8 数据手册

N-Channel Enhancement Mode MOSFET

TBL200N15TH-5DL8

Features



High speed power switching

Enhanced body diode dv/dt capability

Enhanced avalanche ruggednes

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: PDFN5×6-8L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

PDFN5×6-8L

Ordering Information

Part Number

Package

PDFN5×6-8L

Shipping Quantity

Marking Code

200N15TH

TBL200N15TH-5DL8

5000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

I_D

150

±20

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C )

Continuous Drain Current (T_C= 100°C)

Pulsed Drain Current

I_D

I_DM

E_AS

200

Single Pulse Avalanche Energy ^*3

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

P_D

R_θJA

R_θJC

T_J

113

°C /W

°C

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Case

Operating Junction Temperature Range

Storage Temperature Range

1.1

-55 ~ +150

T_STG

°C

MTM1326A: May 2023 [P]

www.gmesemi.com

12 3 4 5

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