Datasheet > TBL200N06-5DL8

TBL200N06-5DL8

更新时间： 2024-04-09 18:59:16

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	762K
描述
43A, 60V, 83W, N Channel, Power MOSFETs

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TBL200N06-5DL8 数据手册

N-Channel Enhancement Mode MOSFET

TBL200N06-5DL8

Features



Super low gate charge

Green device available

Advanced high cell density trench technology

JESD22-A114-B ESD rating of class 1B per human body model

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: PDFN5×6-8L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

PDFN5×6-8L

Ordering Information

Part Number

Package

PDFN5×6-8L

Shipping Quantity

Marking Code

200N06

TBL200N06-5DL8

5000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

Gate-to-Source Voltage

±20

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_C= 100°C)

Continuous Drain Current (T_A= 25°C) ^*1

Continuous Drain Current (T_A= 100°C) ^*1

Pulsed Drain Current (t_p= 10μs, T_C= 25°C )

Single Pulse Avalanche Energy ^*3

8.1

I_D

5.7

I_DM

E_AS

P_D

215

°C

Power Dissipation (T_C= 25°C , R_θJC, bottom)

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +175

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case, bottom

Thermal Resistance Junction-to-Case, top

Thermal Resistance Junction-to-Air ^*1

1.45

1.8

4.2

°C /W

R_θJC

R_θJA

MTM0627A: June 2023 [2.2]

www.gmesemi.com

12 3 4 5 6

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