Datasheet > TBCX55

TBCX55

更新时间： 2024-04-09 18:58:09

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	412K
描述
60V,1A,General Purpose NPN Bipolar Transistor

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TBCX55 数据手册

Product Specification

NPN Silicon AF Transistors

TBCX54/TBCX55/TBCX56

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN MAX

UNIT

I_C=100μA I_B=0 TBCX54

Collector-base breakdown voltage

V_(BR)CBO

TBCX55

TBCX56

100

I_C=10mA I_B=0 TBCX54

TBCX55

Collector-emitter breakdown voltage

V_(BR)CEO

TBCX56

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)EBOI_E=10μA I_C=0

V_CB=30V I_E=0

I_CBO

100

μA

V_CB=30V I_E=0,T_A=150℃

Emitter Cut-off Current

I_EBO

V_EB= 5V, I_C= 0

100

V_CE=2V I_C=5mA

V_CE=2V I_C=150mA

250

BCX54…56

DC current gain

h_FE

V_CE=2V I_C=150mA -10

-16

160

250

100

V_CE=2V I_C=500mA

I_C=500mA I_B=50mA

I_C=500mA ,V_CE=2V

Collector-emitter saturation voltage

Base-emitter Saturation Voltage

Base-emitter voltage

V_CE(sat)

V_BE(sat)

V_BE

0.5

1.2

V_CE=10V, I_C=50mA,

f=20MHz

Transition frequency

f_T

100

MHz

STM0424A: July 2023 [1.0]

www.gmesemi.com

123 4 5

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