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TB3100H PDF预览

TB3100H

更新时间: 2024-11-23 08:28:51
品牌 Logo 应用领域
台湾光宝 - LITEON 光电二极管数据判读及分析中心
页数 文件大小 规格书
4页 49K
描述
SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE

TB3100H 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-C2
针数:2Reach Compliance Code:compliant
HTS代码:8541.30.00.80风险等级:5.7
Is Samacsys:N最大转折电压:350 V
配置:SINGLE最大断态直流电压:275 V
最大维持电流:800 mAJESD-30 代码:R-PDSO-C2
通态非重复峰值电流:50 A元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):255认证状态:Not Qualified
子类别:DIACs表面贴装:YES
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SILICON SURGE PROTECTOR
Base Number Matches:1

TB3100H 数据手册

 浏览型号TB3100H的Datasheet PDF文件第2页浏览型号TB3100H的Datasheet PDF文件第3页浏览型号TB3100H的Datasheet PDF文件第4页 
LITE-ON  
SEMICONDUCTOR  
TB0640H thru TB3500H  
Bi-Directional  
SURFACE MOUNT  
THYRISTOR SURGE PROTECTIVE DEVICE  
58 to 320  
VDRM  
IPP  
-
-
Volts  
100  
Amperes  
FEATURES  
SMB  
Oxide Glass Passivated Junction  
Bidirectional protection in a single device  
Surge capabilities up to 100A @ 10/1000us or 400 @  
8/20us  
SMB  
MIN.  
4.06  
3.30  
1.96  
0.15  
5.21  
0.05  
2.01  
0.76  
DIM.  
A
MAX.  
4.57  
3.94  
2.21  
0.31  
5.59  
0.20  
2.62  
1.52  
High off state Impedance and low on state voltage  
A
Plastic material has UL flammability classification  
94V-0  
B
B
C
C
D
E
F
MECHANICAL DATA  
Case : Molded plastic  
G
G
D
H
F
E
H
Polarity : Denotes none cathode band  
Weight : 0.093 grams  
All Dimensions in millimeter  
MAXIMUM RATINGS  
CHARACTERISTICS  
SYMBOL  
PP  
TSM  
VALUE  
UNIT  
A
A
I
Non-repetitive peak impulse current @ 10/1000us  
Non-repetitive peak On-state current @ 8.3ms (one half cycle)  
Junction temperature range  
100  
50  
I
T
J
-40 to +150  
-55 to +150  
T
STG  
storage temperature range  
THERMAL RESISTANCE  
CHARACTERISTICS  
SYMBOL  
VALUE  
UNIT  
Rth(J-L)  
Rth(J-A)  
Junction to leads  
20  
100  
0.1  
/W  
Junction to ambient on print circuit (on recommended pad layout)  
Typical positive temperature coefficient for brekdown voltage  
/W  
T
J
V
BR  
/
%/  
MAXIMUM RATED SURGE WAVEFORM  
WAVEFORM  
2/10 us  
STANDARD  
I
PP (A)  
500  
100  
Peak value (Ipp)  
GR-1089-CORE  
tr= rise time to peak value  
tp= Decay time to half value  
8/20 us  
10/160 us  
10/700 us  
IEC 61000-4-5  
FCC Part 68  
ITU-T K20/21  
400  
250  
200  
Half value  
50  
0
10/560 us  
FCC Part 68  
160  
100  
tr  
tp  
TIME  
REV. 1-PRE, 07-May-2001, KSWB04  
10/1000 us  
GR-1089-CORE  

TB3100H 替代型号

型号 品牌 替代类型 描述 数据表
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