Datasheet > TB1100H

TB1100H

更新时间： 2023-12-06 20:01:23

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
3页	1086K
描述
Protection Devices Lightning protection tube

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数据手册

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TB1100H 数据手册

@ T_A= 25°C unless otherwise specified

Electrical Characteristics

Off-State

On-State

Rated

Breakover

Current

I_BO

Leakage

Current @

V_DRM

Holding Current

I_H

Repetitive

Off-State

Breakover

Voltage

Off-State

Capacitance

Voltage

@ I_T= 1A

Part Number

Voltage

Min

V_DRM(V)

I_DRM(uA)

V_BO(V)

V_T(V)

C_O(pF)

Max (mA)

(mA)

TB0640H

TB0720H

TB0900H

TB1100H

TB1300H

TB1500H

TB1800H

TB2300H

TB2600H

TB3100H

TB3500H

3.5

800

150

800

200

120

130

160

180

220

265

300

350

400

120

140

160

190

220

275

320

Symbol

Parameter

V_DRM

I_DRM

V_BR

I_BR

Stand-off Voltage

Leakage current at stand-off voltage

Breakdown voltage

Breakdown current

V_BO

I_BO

Breakover voltage

Breakover current

I_H

Holding current

NOTE: 1

V_T

On state voltage

Peak pulse current

Off-state capacitance

I_PP

C_O

NOTE: 2

Notes:

1. I_H> (V_L/R_L) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge

recovery time does not exceed 30ms.

2. Off-state capacitance measured at f = 1.0MHz, 1.0V_RMSsignal, V_R= 2V_DCbias.

DRM

2 of 3

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