Datasheet > TA4011AFE_07

TA4011AFE_07

更新时间： 2024-11-19 03:29:11

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器
页数	文件大小	规格书
4页	115K
描述
UHF Wide Band Amplifier Applications

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中文翻译

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TA4011AFE_07 数据手册

TA4011AFE

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

TA4011AFE

UHF Wide Band Amplifier Applications

Features

•

Low current: I

= 3.5 mA

Wide band: f = 2.4 GHz (3dB down)

Operating supply voltage: V = 1.5~3 V

Weight: 0.003 g (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Supply voltage 1

Symbol

Rating

Unit

3.2

Supply voltage 2

(Note 1)

(Note 2)

Total power dissipation

Operating temperature

Storage temperature

300

°C

opr

−40~85

−55~150

stg

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: When V

is operated at less than 1/4 duty cycle

Note 2: When mounted on the glass epoxy of 2.5 cm × 1.6 t

Marking

OUT

COLLECTOR

U 3

GND IN

2007-11-01

12 3 4

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