Datasheet > TA4015FE_07

TA4015FE_07

更新时间： 2024-11-19 03:29:11

品牌	Logo	应用领域
东芝 - TOSHIBA		振荡器晶体振荡器
页数	文件大小	规格书
4页	124K
描述
Use for Crystal Oscillators

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中文翻译

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数据手册

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TA4015FE_07 数据手册

TA4015FE

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

TA4015FE

TA4015FE Use for Crystal Oscillators

Features

•

Bias resistors, a transistor for oscillation and a transistor for

buffer are packed in one package; hence, TA4015FT can easily

compose a crystal oscillator.

•

TA4015FE comes with a 6-pin thin ultra-compact package

and is suitable for super-high density mounting.

Weight: 0.003 g (typ.)

Unit

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Power supply voltage

Symbol

Rating

Circuit current

°C

Total power dissipation

Junction temperature

Storage temperature

100

125

stg

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristics

Circuit current

Symbol

Test Condition

= 3.0 V

Min

Typ.

Max

Unit

⎯

1.10

1.65

0.92

2.20

1.95

1.32

1.71

0.99

2.28

2.02

1.52

1.79

1.06

2.36

2.10

Oscillator base voltage

Oscillator emitter voltage

Buffer base voltage

Fout voltage

⎯

= 3.0 V

OSCB

OSCE

⎯

BuffB

⎯

Fout

Characteristics

Symbol

Typ.

Unit

R1 resistance

R2 resistance

R3 resistance

R4 resistance

R5 resistance

7.5

6.8

kΩ

820

2007-11-01

12 3 4

中文翻译

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