Datasheet > TA1282N

TA1282N

更新时间： 2024-11-26 21:53:31

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
2页	72K
描述
EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT)

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中文翻译

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数据手册

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TA1282N 数据手册

SEMICONDUCTOR

KTA1282

EPITAXIAL PLANAR PNP TRANSISTOR

TECHNICAL DATA

HIGH CURRENT APPLICATION.

FEATURES

ᴌComplementary to KTC3210.

DIM MILLIMETERS

4.70 MAX

4.80 MAX

3.70 MAX

0.45

1.00

1.27

MAXIMUM RATING (Ta=25ᴱ)

CHARACTERISTIC

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-30

0.85

0.45

14.00 +0.50

0.55 MAX

2.30

0.45 MAX

1.00

-5

-2

I_E

Emitter Current

1. EMITTER

2. COLLECTOR

3. BASE

P_C

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

625

150

-55ᴕ150

ᴱ

T_j

T_stg

TO-92

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC SYMBOL

I_CBO

TEST CONDITION

MIN.

TYP.

MAX.

-100

UNIT

V_CB=-30V, I_E=0

Collector Cut-off Current

I_EBO

V_EB=-5V, I_C=0

Emitter Cut-off Current

V_(BR)CEO

V_(BR)EBO

h_FE(Note)

V_CE(sat)

V_BE

I_C=-10mA, I_B=0

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

DC Current Gain

-30

-5

100

I_C=-1mA, I_C=0

V_CE=-2V, I_C=-500mA

I_C=-1.5A, I_B=-0.03A

V_CE=-2V, I_C=-500mA

V_CB=-10V, I_E=0, f=1MHz

320

-2.0

-1.0

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

f_T

Transition Frequency

120

MHz

C_ob

Collector Output Capacitance

Note : h_FEClassification 0:100ᴕ200, Y:160ᴕ320

1999. 9. 10

Revision No : 0

1/2

中文翻译

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