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T939N20TOF PDF预览

T939N20TOF

更新时间: 2024-11-20 21:05:15
品牌 Logo 应用领域
英飞凌 - INFINEON 栅极
页数 文件大小 规格书
25页 324K
描述
Silicon Controlled Rectifier, 1210000mA I(T), 2000V V(DRM)

T939N20TOF 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.69
标称电路换相断开时间:350 µs关态电压最小值的临界上升速率:1000 V/us
最大直流栅极触发电流:250 mA最大直流栅极触发电压:2.2 V
最大维持电流:300 mA最大漏电流:150 mA
通态非重复峰值电流:19500 A最大通态电压:1.98 V
最大通态电流:1210000 A最高工作温度:125 °C
最低工作温度:-40 °C断态重复峰值电压:2000 V
子类别:Silicon Controlled Rectifiers触发设备类型:SCR
Base Number Matches:1

T939N20TOF 数据手册

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Technische Information / Technical Information  
Netz-Thyristor  
Phase Control Thyristor  
N
T 939 N 20...26  
Elektrische Eigenschften / Electrical properties  
Vorläufige Daten  
Preliminary Data  
Höchstzulässige Werte / Maximum rated values  
Tvj = - 40°C...Tvj max  
Tvj = - 40°C...Tvj max  
Tvj = + 25°C...Tvj max  
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung  
repetitive peak forward off-state and reverse voltages  
VDRM , VRRM  
2000, 2200  
2400, 2600  
V
V
Vorwärts-Stoßspitzensperrspannung  
VDSM  
2000, 2200  
2400, 2600  
V
V
non-repetitive peak foward off-state voltage  
Rückwärts-Stoßspitzensperrspannung  
non-repetitive peak reverse voltage  
VRSM  
2100, 2300  
2500, 2700  
V
V
Durchlaßstrom-Grenzeffektivwert  
RMSM on-state current  
ITRSMSM  
1900  
A
TC = 85 °C  
TC = 64 °C  
Dauergrenzstrom  
ITAVM  
940  
A
A
average on-state current  
1210  
Tvj = 25°C, tp = 10 ms  
Tvj = Tvj max, tp = 10 ms  
Stoßstrom-Grenzwert  
surge current  
ITSM  
19.500  
16.500  
A
A
Tvj = 25°C, tp = 10ms  
Tvj = Tvj max, tp = 10ms  
Grenzlastintegral  
I²t-value  
I²t  
1.900  
1.360  
A²s*10³  
A²s*10³  
Kritische Stromsteilheit  
DIN IEC 747-6  
(diT/dt)cr  
200 A/µs  
f=50 Hz, vL = 10V, iGM = 1 A  
diG/dt = 1 A/µs  
critical rate of rise of on-state current  
Tvj = Tvj max, vD = 0,67 VDRM  
Kritische Spannungssteilheit  
(dvD/dt)cr  
1000 V/µs  
critical rate of rise of off-state voltage  
5.Kennbuchstabe / 5th letter F  
Charakteristische Werte / Characteristic values  
Tvj = Tvj max, iT = 2500 A  
Tvj = Tvj max, iT = 1000 A  
Durchlaßspannung  
on-state voltage  
vT  
max. 1,98  
V
V
max. 1,38  
Tvj = Tvj max  
Tvj = Tvj max  
Tvj = Tvj max  
Schleusenspannung  
threshold voltage  
VT(TO)  
0,95  
V
mW  
Ersatzwiderstand  
slope resistance  
rT  
0,38  
Durchlaßkennlinie  
A=1,0312  
on-state voltage  
vT = A + B x iT + C x ln (iT + 1) + D x Ö iT  
B=3,4432E-04  
C=-2,802E-02  
D=6,0023E-03  
Tvj = 25°C, vD = 6 V  
Tvj = 25°C, vD = 6V  
Zündstrom  
IGT  
max. 250  
mA  
V
gate trigger current  
Zündspannung  
VGT  
IGD  
VGD  
IH  
max.  
2,2  
gate trigger voltage  
Tvj = Tvj max, vD = 6 V  
Nicht zündener Steuerstrom  
gate non-trigger current  
max.  
max.  
10  
5
mA  
mA  
Tvj = Tvj max,vD = 0,5 VDRM  
Tvj = Tvj max,vD = 0,5 VDRM  
Nicht zündene Steuerspannung  
gate non-trigger voltage  
max. 0,25  
max. 300  
max. 1200  
mV  
mA  
mA  
Tvj = 25°C, vD = 6 V, RA = 5 W  
Haltestrom  
holding current  
Tvj = 25°C, vD = 6 V, RGK>=10 W  
iGM = 1 A, diG/dt = 1 A/µs  
tg = 20 µs  
Einraststrom  
IL  
latching current  
Tvj = Tvj max  
Vorwärts- und Rückwärts-Sperrstrom  
forward off-state and reverse currents  
iD, iR  
max. 150  
mA  
µs  
vD = VDRM, vR = VRRM  
Zündverzug  
DIN IEC 747-6  
tgd  
max.  
4
Tvj = 25°C  
gate controlled delay time  
iGM = 1 A, diG/dt = 1 A/µs  
SZ-M / 20.11.1998, K.-A.Rüther  
A 120 / 98  
Seite/page 1  

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