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T648N08TOF

更新时间: 2024-11-15 15:53:39
品牌 Logo 应用领域
英飞凌 - INFINEON 栅极
页数 文件大小 规格书
19页 527K
描述
Silicon Controlled Rectifier, 1300A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element

T648N08TOF 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CXDB-X4
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84配置:SINGLE
最大直流栅极触发电流:250 mAJESD-30 代码:O-CXDB-X4
JESD-609代码:e3元件数量:1
端子数量:4封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
认证状态:Not Qualified最大均方根通态电流:1300 A
断态重复峰值电压:800 V重复峰值反向电压:800 V
表面贴装:YES端子面层:MATTE TIN
端子形式:UNSPECIFIED端子位置:UNSPECIFIED
触发设备类型:SCRBase Number Matches:1

T648N08TOF 数据手册

 浏览型号T648N08TOF的Datasheet PDF文件第2页浏览型号T648N08TOF的Datasheet PDF文件第3页浏览型号T648N08TOF的Datasheet PDF文件第4页浏览型号T648N08TOF的Datasheet PDF文件第5页浏览型号T648N08TOF的Datasheet PDF文件第6页浏览型号T648N08TOF的Datasheet PDF文件第7页 
Datenblatt / Data sheet  
N
Netz-Thyristor  
Phase Control Thyristor  
T648N  
Elektrische Eigenschaften / Electrical properties  
Höchstzulässige Werte / Maximum rated values  
800  
VDRM,VRRM  
1200 V  
1400 V  
1600 V  
1200 V  
1400 V  
1600 V  
1300 V  
1500 V  
1700 V  
1300 A  
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C... Tvj max  
1000  
repetitive peak forward off-state and reverse voltages  
800  
Vorwärts-Stoßspitzensperrspannung  
Tvj = -40°C... Tvj max  
VDSM  
1000  
non-repetitive peak forward off-state voltage  
900  
Rückwärts-Stoßspitzensperrspannung  
non-repetitive peak reverse voltage  
Tvj = +25°C... Tvj max  
VRSM  
1100  
Durchlaßstrom-Grenzeffektivwert  
maximum RMS on-state current  
ITRMSM  
ITAVM  
649 A  
827 A  
Dauergrenzstrom  
average on-state current  
TC = 85 °C  
TC = 69 °C  
13000 A  
11000 A  
Stoßstrom-Grenzwert  
surge current  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
ITSM  
845 10³ A²s  
Grenzlastintegral  
I²t-value  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
I²t  
605 10³ A²s  
120 A/µs  
DIN IEC 747-6  
Kritische Stromsteilheit  
critical rate of rise of on-state current  
(diT/dt)cr  
(dvD/dt)cr  
f = 50 Hz, iGM = 1 A, diG/dt = 1 A/µs  
Kritische Spannungssteilheit  
critical rate of rise of off-state voltage  
Tvj = Tvj max, vD = 0,67 VDRM  
5.Kennbuchstabe / 5th letter F  
1000 V/µs  
Charakteristische Werte / Characteristic values  
Durchlaßspannung  
on-state voltage  
max.  
max.  
2,10 V  
1,29 V  
Tvj = Tvj max , iT = 2500 A  
Tvj = Tvj max , iT = 500 A  
vT  
1 V  
Schleusenspannung  
threshold voltage  
Tvj = Tvj max  
Tvj = Tvj max  
Tvj = Tvj max  
V(TO)  
rT  
0,38 mΩ  
Ersatzwiderstand  
slope resistance  
Durchlaßkennlinie  
on-state characteristic  
A=  
B=  
C=  
D=  
1,314E+00  
1,844E-04  
-9,537E-02  
2,128E-02  
vT = A + B iT + C Ln(iT + 1) + D iT  
Zündstrom  
Tvj = 25°C, vD = 6 V  
Tvj = 25°C, vD = 6 V  
IGT  
VGT  
IGD  
VGD  
IH  
max.  
250 mA  
gate trigger current  
Zündspannung  
gate trigger voltage  
max.  
1,5 V  
Nicht zündender Steuerstrom  
gate non-trigger current  
Tvj = Tvj max , vD = 6 V  
Tvj = Tvj max , vD = 0,5 VDRM  
max.  
max.  
10 mA  
5 mA  
Nicht zündende Steuerspannung  
gate non-trigger voltage  
Tvj = Tvj max , vD = 0,5 VDRM  
max.  
0,2 V  
Haltestrom  
holding current  
Tvj = 25°C, vD = 6 V, RA = 5 Ω  
Tvj = 25°C, vD = 6 V, RGK 10 Ω  
max.  
300 mA  
Einraststrom  
latching current  
IL  
max. 1500 mA  
iGM = 1 A, diG/dt = 1 A/µs, tg = 20 µs  
Vorwärts- und Rückwärts-Sperrstrom  
forward off-state and reverse current  
Tvj = Tvj max  
iD, iR  
tgd  
max.  
max.  
80 mA  
4 µs  
vD = VDRM, vR = VRRM  
Zündverzug  
gate controlled delay time  
DIN IEC 747-6  
Tvj = 25 °C,iGM = 1 A, diG/dt = 1 A/µs  
M.Droldner  
date of publication: 07.03.85  
prepared by:  
revision:  
1
approved by: J. Novotny  
A2/86  
Seite/page  
1/18  
A 513 E2 / 07.03.85, Spec  

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