Datasheet > T590N18TOFHOSA1

T590N18TOFHOSA1

更新时间： 2023-07-15 00:00:00

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	273K
描述
Silicon Controlled Rectifier, 1330A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 1 Element

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T590N18TOFHOSA1 数据手册

Datenblatt / Data sheet

Netz-Thyristor

Phase Control Thyristor

T590N

Elektrische Eigenschaften / Electrical properties

Höchstzulässige Werte / Maximum rated values

1200

1400

1600 V

1800 V

T_vj= -40°C... T_{vj max}

V_DRM,V_RRM

^Pere^ion^din^scd^ha^et^Ve^on^{rwärts- und Rückwärts-Spitzensperrspannung}

^V^reop^r^e^w^t^ä^it^r^iv^ts^e^-S^p^t^eoa^s^k^ss^fo^p^rⁱ^w^tz^a^e^rⁿ^d^sp^o^e^ff^r^-^r^s^s^ta^p^t^a^eⁿ^aⁿⁿ^u^d^ng^reE^verl^se^{e v}k^oltt^agr^ei^ssche^T_vj

= -

gen^{. T}_vs_{j ma}c_xhaften V_DSM

0°

C..

1200

1400

1600 V

1800 V

non-repetitive peak forward off-state voltage

1300

1500

1700 V

1900 V

Rückwärts-Stossspitzensperrspannung

non-repetitive peak reverse voltage

T_vj= +25°C... T_{vj max}

V_RSM

I_TRMSM

I_TAVM

1250 A

590 A

840 A

1330 A

Durchlassstrom-Grenzeffektivwert

maximum RMS on-state current

Dauergrenzstrom

average on-state current

T_C= 85°C

Dauergrenzstrom

average on-state current

Durchlaßstrom-Effektivwert

RMS on-state current

T_C= 55 °C, θ = 180°sin, t_P= 10 ms I_TAVM

I_TRMS

9400 A

8000 A

T_vj= 25 °C °C, t_P= 10 ms

T_vj= T_{vj max}, t_P= 10 ms

Stossstrom-Grenzwert

surge current

I_TSM

442 10³ A²s

320 10³ A²s

Grenzlastintegral

I²t-value

T_vj= 25 °C, t_P= 10 ms

T_vj= T_{vj max}, t_P= 10 ms

I²t

DIN IEC 60747-6

200 A/µs

Kritische Stromsteilheit

(di_T/dt)_cr

(dv_D/dt)_cr

f = 50 Hz, i_GM= 1 A, di_G/dt = 1 A/µs

critical rate of rise of on-state current

1000 V/µs

Kritische Spannungssteilheit

critical rate of rise of off-state voltage

T_vj= T_{vj max}, v_D= 0,67 V_DRM

5.Kennbuchstabe / 5^thletter F

Charakteristische Werte / Characteristic values

Durchlassspannung

on-state voltage

max.

2,15 V

1,19 V

T_vj= T_{vj max}, i_T= 2400 A

T_vj= T_{vj max}, i_T= 500 A

v_T

0,8 V

Schleusenspannung

threshold voltage

T_vj= T_{vj max}

V_(TO)

r_T

0,5 mΩ

Ersatzwiderstand

slope resistance

Durchlasskennlinie

on-state characteristic

100 A ≤ i_T≤ 3000 A

9,775E-01

2,642E-04

-8,379E-02

2,424E-02

v_T= A + B i_T+ C ln(i_T+ 1) + D

i_T

Zündstrom

T_vj= 25 °C, v_D= 12V

I_GT

V_GT

I_GD

V_GD

I_H

max.

250 mA

gate trigger current

Zündspannung

gate trigger voltage

max.

2,2 V

Nicht zündender Steuerstrom

gate non-trigger current

T_vj= T_{vj max}, v_D= 12V

T_vj= T_{vj max}, v_D= 0,5 V_DRM

max.

10 mA

5 mA

Nicht zündende Steuerspannung

gate non-trigger voltage

T_vj= T_{vj max}, v_D= 0,5 V_DRM

T_vj= 25°C, v_D= 12V

max.

0,25 V

Haltestrom

holding current

max.

300 mA

Einraststrom

latching current

T_vj= 25°C, v_D= 12V, R_GK≥ 10 Ω

i_GM= 1 A, di_G/dt = 1 A/µs, t_g= 20 µs

I_L

max. 1200 mA

Vorwärts- und Rückwärts-Sperrstrom

forward off-state and reverse current

T_vj= T_{vj max}

i_D, i_R

t_gd

max.

50 mA

4 µs

v_D= V_DRM, v_R= V_RRM

Zündverzug

gate controlled delay time

DIN IEC 60747-6

T_vj= 25 °C, i_GM= 1 A, di_G/dt = 1 A/µs

H.Sandmann

date of publication: 2008-09-17

prepared by:

revision:

1.0

approved by: M.Leifeld

IFBIP D AEC, 2008-09-17, H.Sandmann

Seite/page

1/10

A 50/08

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