Datasheet > T3160N12TOFVT

T3160N12TOFVT

更新时间： 2024-11-26 09:03:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	274K
描述
Silicon Controlled Rectifier, 3160000mA I(T), 1200V V(DRM),

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Datenblatt / Data sheet

Vorläufige Daten

preliminary data

Netz-Thyristor

Phase Control Thyristor

T3160N

Elektrische Eigenschaften / Electrical properties

Höchstzulässige Werte / Maximum rated values

1200

1400

1600 V

1800 V

Periodische Vorwärts- und Rückwärts-Spitzensperrspannung T_vj= -40°C... T_{vj max}

V_DRM,V_RRM

enndaten

repetitive peak forward off-state and reverse voltages

Elektrische Eigenschaften

1200

1400

1600 V

1800 V

Vorwärts-Stossspitzensperrspannung

T_vj= -40°C... T_{vj max}

V_DSM

non-repetitive peak forward off-state voltage

1300

1500

1700 V

1900 V

Rückwärts-Stossspitzensperrspannung

non-repetitive peak reverse voltage

T_vj= +25°C... T_{vj max}

V_RSM

7000 A

3160 A

4620 A

7250 A

Durchlassstrom-Grenzeffektivwert

maximum RMS on-state current

I_TRMSM

I_TAVM

Dauergrenzstrom

average on-state current

Dauergrenzstrom

average on-state current

Durchlaßstrom-Effektivwert

RMS on-state current

T_C= 85 °C

T_C= 55 °C, θ = 180°sin, t_P= 10 ms I_TAVM

I_TRMS

63000 A

57000 A

T_vj= 25 °C °C, t_P= 10 ms

T_vj= T_{vj max}, t_P= 10 ms

Stossstrom-Grenzwert

surge current

I_TSM

19845 10³ A²s

16245 10³ A²s

Grenzlastintegral

I²t-value

T_vj= 25 °C, t_P= 10 ms

T_vj= T_{vj max}, t_P= 10 ms

I²t

DIN IEC 60747-6

200 A/µs

Kritische Stromsteilheit

(di_T/dt)_cr

(dv_D/dt)_cr

f = 50 Hz, i_GM=1 A, di_G/dt = 1 A/µs

critical rate of rise of on-state current

1000 V/µs

Kritische Spannungssteilheit

critical rate of rise of off-state voltage

T_vj= T_{vj max}, v_D= 0,67 V_DRM

5.Kennbuchstabe / 5^thletter F

Charakteristische Werte / Characteristic values

Durchlassspannung

on-state voltage

max.

2,04 V

1,37 V

T_vj= T_{vj max}, i_T= 14 kA

T_vj= T_{vj max}, i_T= 6 kA

v_T

0,85 V

Schleusenspannung

threshold voltage

Ersatzwiderstand

slope resistance

Durchlasskennlinie

on-state characteristic

T_vj= T_{vj max}

V_(TO)

r_T

0,082 mΩ

1000 A ≤ i_T≤ 15000 A

7,280E-01

7,670E-05

7,743E-03

1,570E-03

v_T= A + B i_T+ C ln(i_T+ 1) + D

i_T

Zündstrom

T_vj= 25 °C, v_D= 12V

I_GT

max.

250 mA

gate trigger current

Zündspannung

gate trigger voltage

Nicht zündender Steuerstrom

gate non-trigger current

V_GT

I_GD

max.

2,5 V

T_vj= T_{vj max}, v_D= 12V

T_vj= T_{vj max}, v_D= 0,5 V_DRM

max.

10 mA

5 mA

Nicht zündende Steuerspannung

gate non-trigger voltage

T_vj= T_{vj max}, v_D= 0,5 V_DRM

T_vj= 25°C, v_D= 12V

V_GD

I_H

max.

0,25 V

Haltestrom

holding current

max.

300 mA

Einraststrom

latching current

T_vj= 25°C, v_D= 12V, R_GK≥ 10 Ω

i_GM= 1 A, di_G/dt = 1 A/µs, t_g= 20 µs

I_L

max. 1500 mA

Vorwärts- und Rückwärts-Sperrstrom

forward off-state and reverse current

T_vj= T_{vj max}

i_D, i_R

t_gd

max.

250 mA

4 µs

v_D= V_DRM, v_R= V_RRM

Zündverzug

gate controlled delay time

DIN IEC 60747-6

T_vj= 25 °C, i_GM= 1 A, di_G/dt = 1 A/µs

prepared by: H.Sandmann

approved by: M.Leifeld

date of publication: 2008-08-07

revision:

1.4

Seite/page

1/10

IFBIP D AEC / 2008-03-03, H.Sandmann

A 07/08

12 3 4 5 6 7...10

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与T3160N12TOFVT相关器件

型号	品牌	获取价格	描述	数据表
T3160N12TOFVTXPSA1	INFINEON	获取价格	Silicon Controlled Rectifier, 7250A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element,
T3160N14TOF	INFINEON	获取价格	Silicon Controlled Rectifier, 7250A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element
T3160N14TOFVT	INFINEON	获取价格	Silicon Controlled Rectifier, 3160000mA I(T), 1400V V(DRM)
T3160N14TOFVTXPSA1	INFINEON	获取价格	Silicon Controlled Rectifier, 7250A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element,
T3160N16TOF	INFINEON	获取价格	Silicon Controlled Rectifier, 7250A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element
T3160N16TOF VT	INFINEON	获取价格	Phase Control Thyristor?1600 V, 3160 A with 111 mm diameter and a height of 26 mm assemble
T3160N16TOFVT	INFINEON	获取价格	Silicon Controlled Rectifier, 3160000mA I(T), 1600V V(DRM)
T3160N16TOFVTXPSA1	INFINEON	获取价格	Silicon Controlled Rectifier, 7250A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element,
T3160N18TOF	INFINEON	获取价格	Silicon Controlled Rectifier, 7250A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 1 Element
T3160N18TOF VT	INFINEON	获取价格	Phase Control Thyristor?1800 V, 3160 A with 111 mm diameter and a height of 26 mm assemble

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