Datasheet > T2322BG

T2322BG

更新时间： 2024-04-18 10:34:03

品牌	Logo	应用领域
力特 - LITTELFUSE		开关栅电源开关晶体管栅极可控硅
页数	文件大小	规格书
4页	499K
描述
此三端双向可控硅主要为交流电源开关而设计。这类三端双向可控硅的栅极灵敏度实现了对经济型晶体管控制电路或集成电路控制电路的使用，并增强了其在低功耗相位控制和负载开关应用中的用途。功能与特色:

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T2322BG 数据手册

Thyristors

Surface Mount – 200V > T2322B

Dynamic Characteristics

Characteristic

Symbol

Min

Typ

Max

Unit

Critical Rate-of-Rise of Off State Voltage

(V_D= Rated V_DRM, Exponential Waveform, T_C= 100°C)

dv/dt

100

−

V/µs

Critical Rate of Rise of On−State Current (V_D= Rated V_DRM, I_TM= 3.5 A pk, Commutating

di/dt = 1.26 A/ms, Gate Unenergized, T_C= 90°C)

di/dt

1.0

4.0

A/µs

2. Pulse Width =1.0 ms, Duty Cycle ≤ 1%.

Voltage Current Characteristic of SCR

Symbol

Parameter

+Current

V_DRM

I_DRM

V_RRM

I_RRM

V_TM

I_H

Peak Repetitive Forward Off State Voltage

Peak Forward Blocking Current

Peak Repetitive Reverse Off State Voltage

Peak Reverse Blocking Current

Maximum On State Voltage

Quadrant 1

Main Terminal 2+

V_TM

On State

I_H

I_RRMat V_RRM

Holding Current

+Voltage

I_DRMat V_DRM

Off State

I_H

Quadrant Deﬁnitions for aTriac

Quadrant 3

Main Terminal 2-

V_TM

MT2 Positive

(Positive Half Cycle)

(+) MT 2

(-) I_GT

Gate

(-) I_GT

Gate

Quadrant II

Quadrant I

MT 1

REF

(-) MT 2

MT 1

REF

(-) MT 2

I_GT

(-) I_GT

Gate

(-) I_GT

Gate

Quadrant III

Quadrant IV

MT 1

REF

MT 1

REF

MT2 Negative

(Negative Half Cycle)

All Polarities are referenced to MT1.

With in-phase signals (using standard AC lines) quadrants I and III are used

Speciﬁcations are subject to change without notice.

Revised: 09/09/20

1 234

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与T2322BG相关器件

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T2322BHR	DIGITRON	TRIAC	获取价格
T2322B-VA	MOTOROLA	200V, 2.5A, TRIAC, TO-225AA	获取价格
T2322B-VB	MOTOROLA	200V, 2.5A, TRIAC, TO-225AA	获取价格
T2322B-VE	MOTOROLA	200V, 2.5A, TRIAC, TO-225AA	获取价格
T2322B-VS	MOTOROLA	TRIAC, 200V V(DRM), 2.5A I(T)RMS, TO-225AA,	获取价格
T2322C	DIGITRON	SILICON BIDIRECTIONAL THYRISTORS	获取价格