Datasheet > T2322F

T2322F

更新时间： 2024-11-06 01:16:47

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DIGITRON		/
页数	文件大小	规格书
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描述
SILICON BIDIRECTIONAL THYRISTORS

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中文翻译

获取价格

数据手册

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T2322F 数据手册

D I G I T R O N S E M I C O N D U C T O R S

T2322, T2323 SERIES

SENSITIVE GATE TRIACS

SILICON BIDIRECTIONAL THYRISTORS

2.5 AMPERES RMS; 50 THROUGH 600 VOLTS

Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

MAXIMUM RATINGS (T_J= 25°C unless otherwise noted)

Rating

Suffix

Symbol

Value

Unit

(Note 1)

Peak Repetitive Off-State Voltage

(T_J= 25 to 100°C, Gate Open)

T2322, T2323

100

200

300

400

500

600

V_DRM

RMS On-State Current (T_C= 70°C)

I_T(RMS)

2.5

(Full Cycle Sine Wave 50 to 60 Hz)

Peak Non-Repetitive Surge Current

I_TSM

(One Full Cycle, 60 Hz)

Circuit Fusing (t ≤ 8.3ms)

I²t

2.6

A²s

Peak-Gate Power (1µs)

P_GM

Average Gate Power

P_G(AV)

0.15

(T_C= 60°C)

Peak Gate Current (1µs)

I_GM

T_J

0.5

°C

Operating Junction Temperature Range

Storage Temperature Range

-40 to +110

-40 to +150

8.0

T_stg

°C

(Note 2)

Mounting Torque (6-32 Screw)

In. lb.

THERMAL CHARACTERISTICS

Characteristic

Symbol

R_θJC

Max

3.5

Unit

°C/W

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

R_θJA

ELECTRICAL CHARACTERISTICS (T_C= 25°C unless otherwise noted; Electrical characteristics apply in both directions)

Characteristics

Symbol

Min

Typ

Max

Unit

Peak Blocking Current

T_J= 25°C

µA

I_DRM

(V_D= Rated V_DRM,Gate Open)

T_J= 100°C

0.2

0.75

(Note 3)

Peak On-State Voltage

T2323 Series

T2322 Series

1.7

2.6

2.2

V_TM

(I_TM= 10A)

Gate Trigger Current (Continuous dc)

(V_D= 12V, R_L= 30Ω)

T2322 Series

All Modes

I_GT

MT2(+), G(+); MT2(-), G(-)

MT2(+), G(-); MT2(-), G (+)

T2323 Series

Gate Trigger Voltage (Continuous dc)

(V_D= 12 Vdc, R_L= 30Ω, T_C= 25°C)

(V_D= V_DRM, R_L= 125Ω, T_C= 100°C)

V_GT

2.2

0.15

Holding Current

I_H

t_gt

1.8

100

2.5

µs

(V_D= 12V, I_TM= 150mA, Gate Open)

Gate Controlled Turn-On Time

(V_D= Rated V_DRM, I_TM= 10A pk, I_G= 60mA)

Critical Rate of Rise of Off-State Voltage

(V_D= Rated V_DRM, Exponential Waveform, T_C= 100°C)

dv/dt

V/µs

phone +1.908.245-7200

fax +1.908.245-0555

sales@digitroncorp.com

www.digitroncorp.com

144 Market Street

Kenilworth NJ 07033 USA

Revised: 20130201

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与T2322F相关器件

型号	品牌	获取价格	描述	数据表
T2322M	DIGITRON	获取价格	SILICON BIDIRECTIONAL THYRISTORS
T2322M-11	MOTOROLA	获取价格	TRIAC, 600V V(DRM), 2.5A I(T)RMS, TO-225AA,
T2322M-4	MOTOROLA	获取价格	600V, 2.5A, TRIAC, TO-225AA
T2322M-5	MOTOROLA	获取价格	TRIAC, 600V V(DRM), 2.5A I(T)RMS, TO-225AA,
T2322MHR	DIGITRON	获取价格	TRIAC
T2322M-VA	MOTOROLA	获取价格	600V, 2.5A, TRIAC, TO-225AA
T2322M-VB	MOTOROLA	获取价格	600V, 2.5A, TRIAC, TO-225AA
T2322M-VD	MOTOROLA	获取价格	TRIAC, 600V V(DRM), 2.5A I(T)RMS, TO-225AA,
T2322M-VK	MOTOROLA	获取价格	600V, 2.5A, TRIAC, TO-225AA
T2322M-VL	MOTOROLA	获取价格	暂无描述