T2322BG

更新时间： 2024-02-20 03:48:29

品牌	Logo	应用领域
安森美 - ONSEMI		触发装置可控硅三端双向交流开关栅局域网
页数	文件大小	规格书
4页	56K
描述
Sensitive Gate Triacs Silicon Bidirectional Thyristors

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技术参数
数据手册

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T2322BG 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.78
Is Samacsys：	N	Base Number Matches：	1

T2322BG 数据手册

T2322B

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

3.5

Unit

°C/W

°C

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Sec

260

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

DRM,

RRM

(V = Rated V , V Gate Open)

T = 25°C

−

0.2

0.75

DRM

RRM;

T = 110°C

ON CHARACTERISTICS

Peak On-State Voltage (Note 3)

−

1.7

−

2.2

(I = "10 A)

Gate Trigger Current (Continuous dc)

(V = 12 V, R = 100 W)

All Quadrants

Gate Trigger Voltage (Continuous dc)

−

0.15

−

1.0

−

2.2

−

(V = 12 Vdc, R = 100 W, T = 25°C)

Gate Non−Trigger Voltage

(V = 12 V, R = 100 W, T = 110°C)

Holding Current

1.8

2.5

(V = 12 V, I (Initiating Current) = "200 mA, Gate Open)

Gate Controlled Turn-On Time

−

(V = Rated V

, I = 10 A pk, I = 60 mA, tr = 0.1 msec)

DRM TM

DYNAMIC CHARACTERISTICS

Critical Rate-of-Rise of Off-State Voltage

(V = Rated V , Exponential Waveform, T = 100°C)

dv/dt

100

4.0

−

V/ms

DRM

Critical Rate-of-Rise of Commutation Voltage

(V = Rated V , I = 3.5 A pk, Commutating

dv/dt(c)

1.0

DRM TM

di/dt = 1.26 A/ms, Gate Unenergized, T = 90°C)

3. Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 2%.

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