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T15B12A thru T15B51A PDF预览

T15B12A thru T15B51A

更新时间: 2024-11-25 14:52:59
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威世 - VISHAY /
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5页 84K
描述
Surface-Mount PAR? Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions

T15B12A thru T15B51A 数据手册

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T15B12A thru T15B51A  
Vishay General Semiconductor  
www.vishay.com  
Surface-Mount PAR® Transient Voltage Suppressors  
High Temperature Stability and High Reliability Conditions  
FEATURES  
• Junction passivation optimized design  
passivated anisotropic rectifier technology  
• TJ = 185 °C capability suitable for high  
reliability and automotive requirement  
• 1500 W peak pulse power capability with a  
10/1000 μs waveform  
Available  
• Unidirectional  
SMB (DO-214AA)  
• Excellent clamping capability  
• Very fast response time  
Cathode  
Anode  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
PRIMARY CHARACTERISTICS  
• AEC-Q101 qualified  
VBR  
12 V to 51 V  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
VWM  
10.2 V to 43.6 V  
1500 W  
PPPM  
MECHANICAL DATA  
TJ max.  
Polarity  
Package  
185 °C  
Case: SMB (DO-214AA)  
Molding compound meets UL 94 V-0 flammability rating  
Unidirectional  
SMB (DO-214AA)  
Base P/NHM3  
- halogen-free, RoHS-compliant, and  
AEC-Q101 qualified  
TYPICAL APPLICATIONS  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lightning  
on ICs, MOSFET, signal lines of sensor units for automotive.  
HM3 suffix meets JESD 201 class 2 whisker test  
Polarity: color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
VALUE  
1500  
UNIT  
W
Peak pulse power dissipation with a 10/1000 μs waveform (fig.1) (1)  
Peak pulse current with a 10/1000 μs waveform (fig.3) (1)  
Operating junction and storage temperature range  
IPPM  
See table next page  
-65 to +185  
A
TJ, TSTG  
°C  
Note  
(1)  
Non-repetitive current pulse, per fig.3 and derated above TA = 25 °C per fig.2  
Revision: 06-Jun-2023  
Document Number: 98360  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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