Datasheet > T1180P6-SD-F

T1180P6-SD-F

更新时间： 2024-12-01 01:16:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	87K
描述
Silicon PIN Photodiode

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T1180P6-SD-F 数据手册

T1180P6

Vishay Semiconductors

www.vishay.com

Silicon PIN Photodiode

FEATURES

• Package type: chip

• Package form: single chip

• Dimensions (L x W x H in mm): 0.67 x 0.3 x 0.28

• Radiant sensitive area (in mm²): 0.055

• Peak sensitivity wavelength: 810 nm

• High photo sensitivity

• Suitable for visible light and near infrared

radiation

• Fast response times

• Angle of half sensitivity: ϕ = 60ꢀ

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESCRIPTION

T1180P6 is a high speed and high sensitive PIN photodiode

chip with 0.055 mm²sensitive area detecting visible and

near infrared radiation. Anode is the bond pad on top.

APPLICATIONS

• High speed photo detector

GENERAL INFORMATION

The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is

provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used

conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures

and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in

this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore

sold die may not perform on an equivalent basis to standard package products.

PRODUCT SUMMARY

COMPONENT

I_ra(μA)

ϕ (deg)

λ_0.5(nm)

T1180P6

0.59

590 to 1010

Note

•

Test conditions see table “Basic Characteristics”

ORDERING INFORMATION

ORDERING CODE

PACKAGING

REMARKS

PACKAGE FORM

T1180P6-SD-F

Wafer sawn on foil with disco frame

MOQ: 330 000 pcs

Chip

Note

MOQ: minimum order quantity

•

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 ꢀC, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

V_R

Junction temperature

T_j

100

ꢀC

Operating temperature range

Storage temperature range

Storage temperature range on foil

T_amb

T_stg1

T_stg2

-40 to +100

-40 to +50

ꢀC

Rev. 1.2, 07-Dec-15

Document Number: 84246

For technical questions, contact: optochipsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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