Datasheet > T1050H6T

T1050H6T

更新时间： 2022-03-25 07:50:20

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可控硅
页数	文件大小	规格书
10页	135K
描述
High temperature 10 A Triacs

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T1050H6T 数据手册

Package mechanical data

T1035H, T1050H

Table 6.

TO-220AB and TO-220AB Ins dimensions

Dimensions

Millimeters

Min. Typ. Max. Min. Typ. Max.

Ref.

Inches

15.20

15.90 0.598

0.625

3.75

0.147

a2 13.00

10.00

14.00 0.511

10.40 0.393

0.88 0.024

1.32 0.048

4.60 0.173

0.70 0.019

2.72 0.094

2.70 0.094

6.60 0.244

3.85 0.147

0.551

0.409

0.034

0.051

0.181

0.027

0.107

0.106

0.259

0.151

Ø I

b1 0.61

b2 1.23

4.40

c1 0.49

c2 2.40

2.40

6.20

ØI 3.75

I4 15.80 16.40 16.80 0.622 0.646 0.661

2.65

1.14

2.95 0.104

1.70 0.044

0.116

0.066

2.60

0.102

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a Lead-free second level interconnect . The category of

second level interconnect is marked on the package and on the inner box label, in

compliance with JEDEC Standard JESD97. The maximum ratings related to soldering

conditions are also marked on the inner box label. ECOPACK is an ST trademark.

ECOPACK specifications are available at: www.st.com.

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与T1050H6T相关器件

型号	品牌	获取价格	描述	数据表
T1050H-6T	STMICROELECTRONICS	获取价格	High temperature 10 A Triacs
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T1050N2400TOC	VISHAY	获取价格	Silicon Controlled Rectifier, 1000000mA I(T), 2400V V(DRM),
T1050N2400TOF	VISHAY	获取价格	Silicon Controlled Rectifier, 1000000mA I(T), 2400V V(DRM),
T1050N2600TOC	VISHAY	获取价格	Silicon Controlled Rectifier, 1000000mA I(T), 2600V V(DRM),
T1050N2600TOF	VISHAY	获取价格	Silicon Controlled Rectifier, 1000000mA I(T), 2600V V(DRM),
T1050N2800TOF	VISHAY	获取价格	Silicon Controlled Rectifier, 1000000mA I(T), 2800V V(DRM),