Datasheet > T1050H6T

T1050H6T

更新时间： 2022-03-25 07:50:20

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可控硅
页数	文件大小	规格书
10页	135K
描述
High temperature 10 A Triacs

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T1050H6T 数据手册

Characteristics

T1035H, T1050H

Figure 3.

RMS on-state current versus

Figure 4.

Variation of thermal impedance

versus pulse duration

ambient temperature (Epoxy

printed circuit board FR4,

copper thickness = 35 µm)

_T(RMS)(A)

Z_th(°C/W)

1.0E+02

1.0E+01

1.0E+00

1.0E-01

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

α=180 °

Z_th(j-a)

D²PAK

_CU=1 cm²

Z_th(j-c)

t_P(s)

T_amb(°C)

1.0E-03

1.0E-02

1.0E-01

1.0E+00 1.0E+01

1.0E+02 1.0E+03

100

125

150

Figure 5.

On-state characteristics (maximum Figure 6.

values)

Surge peak on-state current versus

number of cycles

I_TM(A)

100

_TSM(A)

110

100

t=20ms

Non repetitive

T_jinitial=25 °C

One cycle

T_j=150 °C

T_j=25 °C

Repetitive

T_c=125 °C

T_jmax. :

V_t0= 0.80 V

R_d= 34 mΩ

Number of cycles

V_TM(V)

2.5

100

1000

0.0

0.5

1.0

1.5

2.0

3.0

3.5

4.0

4.5

5.0

Figure 7.

Non-repetitive surge peak on-state Figure 8.

current for a sinusoidal pulse with

Relative variation of gate trigger

current, holding current and

latching current versus junction

temperature (typical values)

width t < 10 ms and corresponding

value of I t

I_GT, I_H, I_L[T_j] / I_GT, I_H, I_L[T_j=25°C]

_TSM(A), I²t (A²s)

2.5

2.0

1.5

1.0

0.5

0.0

10000

1000

100

Tj initial=25 °C

dI/dt limitation: 50 A/µs

I_GT

I_TSM

I_H& I_L

I²t

T_j(°C)

t_P(ms)

0.01

0.10

1.00

10.00

-40

-20

100

120

140

160

4/10

1 2 345 6 7...10

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