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SZMSQA6V1W5T2G PDF预览

SZMSQA6V1W5T2G

更新时间： 2023-06-19 14:31:46
品牌 Logo 应用领域
安森美 - ONSEMI 二极管瞬态抑制器
页数 文件大小 规格书
4页 52K
描述
用于 ESD 防护的二极管阵列

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中文翻译

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SZMSQA6V1W5T2G 技术参数

是否无铅：不含铅生命周期：End Of Life
针数：5Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
Factory Lead Time：1 week风险等级：6.21
Is Samacsys：N击穿电压标称值：6.6 V
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-609代码：e3
湿度敏感等级：1峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL子类别：Transient Suppressors
表面贴装：YES端子面层：Tin (Sn)
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

SZMSQA6V1W5T2G 数据手册

 浏览型号SZMSQA6V1W5T2G的Datasheet PDF文件第2页浏览型号SZMSQA6V1W5T2G的Datasheet PDF文件第3页浏览型号SZMSQA6V1W5T2G的Datasheet PDF文件第4页 
MSQA6V1W5T2  
Quad Array for  
ESD Protection  
This quad monolithic silicon voltage suppressor is designed for  
applications requiring transient overvoltage protection capability. It is  
intended for use in voltage and ESD sensitive equipment such as  
computers, printers, business machines, communication systems,  
medical equipment, and other applications. Its quad junction common  
anode design protects four separate lines using only one package.  
These devices are ideal for situations where board space is at a  
premium.  
http://onsemi.com  
1
2
3
5
4
Features  
• SC−88A Package Allows Four Separate Unidirectional  
Configurations  
• Low Leakage < 1 mA @ 3 V  
• Breakdown Voltage: 6.1 V − 7.2 V @ 1 mA  
• Low Capacitance (90 pF typical)  
• ESD Protection Meeting IEC1000−4−2  
• Pb−Free Package is Available*  
SC−88A/SOT−323  
CASE 419A  
Mechanical Characteristics:  
• Void Free, Transfer−Molded, Thermosetting Plastic Case  
• Corrosion Resistant Finish, Easily Solderable  
• Package Designed for Optimal Automated Board Assembly  
• Small Package Size for High Density Applications  
MARKING DIAGRAM  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
61 M G  
Peak Power Dissipation @ 20 ms  
P
pk  
G
@T ≤ 25°C (Note 1)  
150  
385  
W
A
Steady State Power − 1 Diode (Note 2)  
P
mW  
D
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
325  
3.1  
°C/W  
mW/°C  
Above 25°C, Derate  
61 = Device Code  
Maximum Junction Temperature  
T
150  
°C  
°C  
Jmax  
M
= Date Code  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
Operating Junction and Storage  
Temperature Range  
T T  
J
−55 to +150  
stg  
ESD Discharge  
V
kV  
PP  
MIL STD 883C − Method 3015−6  
IEC1000−4−2, Air Discharge  
IEC1000−4−2, Contact Discharge  
16  
16  
9
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
Lead Solder Temperature (10 s duration)  
T
260  
°C  
L
MSQA6V1W5T2  
SC−88A  
3000/Tape & Reel  
3000/Tape & Reel  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. Non−repetitive current per Figure 1. Derate per Figure 2.  
2. Only 1 diode under power. For all 4 diodes under power, P will be 25%.  
MSQA6V1W5T2G SC−88A  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
D
Mounted on FR−4 board with min pad.  
*T2 Suffix Devices are Packaged with Pin 1 Opposing  
Sprocket Hole.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 4  
MSQA6V1W5T2/D  
 
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