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SYS8512FKL-45 PDF预览

SYS8512FKL-45

更新时间: 2024-11-12 09:08:23
品牌 Logo 应用领域
MOSAIC 静态存储器光电二极管
页数 文件大小 规格书
7页 108K
描述
SRAM Module, 512KX8, 45ns, CMOS, PDIP32, PLASTIC, DIP-32

SYS8512FKL-45 数据手册

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512K x 8 SRAM MODULE  
SYS8512FK-20/25/35/45  
11403 West Bernado Court, Suite 100, San Diego, CA 92127.  
Tel No: (619) 674 2233, Fax No: (619) 674 2230  
Issue 5.0 : November 1999  
Description  
Features  
Access Times of 20/25/35/45 ns.  
The SYS8512FK is plastic 4M Static RAM Module  
housed in a standard 32 pin Dual-In-Line package  
organised as 512K x 8. The module utilises fast  
256Kx4 SRAMs housed in SOJ packages, and  
uses double sided surface mount techniques to  
achieve a very high density module.  
32 Pin 0.6" Dual-In-Line package with  
JEDEC compatible pinout.  
5 Volt Supply ± 10%.  
Low Power Dissipation:  
Average (min cycle)  
Standby -L (CMOS)  
2.42W (maximum).  
44mW (maximum).  
The module has Chip Select, Write Enable and  
Output Enable control inputs; the Output Enable  
pinallowsfasteraccesstimesthanaddressaccess  
during a Read Cycle.  
Completely Static Operation.  
Equal Access and Cycle Times.  
All Inputs and Outputs Directly TTL Compatible  
On-board Supply Decoupling Capacitors.  
A0 - A17  
D0 - D7  
1
2
3
4
5
6
7
8
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
A18  
A16  
A14  
A12  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
D0  
D1  
D2  
VCC  
A15  
A17  
WE  
A13  
A8  
WE  
OE  
256K X 4  
SRAM  
256K X 4  
SRAM  
256K X 4  
SRAM  
256K X 4  
SRAM  
A9  
A11  
OE  
A10  
CS  
D7  
D6  
D5  
D4  
D3  
CS  
CS  
CS  
CS  
9
10  
11  
12  
13  
14  
15  
16  
CS  
DECODER  
A18  
Pin Functions  
GND  
Address Inputs  
Data Input/Output  
Chip Select  
A0 - A18  
D0 - D7  
CS  
Package Details  
Write Enable  
Output Enable  
Power (+5V)  
Ground  
WE  
OE  
Plastic 32 pin 0.6" Jedec DIP  
VCC  
GND  

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