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SY10EL12VZI PDF预览

SY10EL12VZI

更新时间: 2024-11-27 14:28:27
品牌 Logo 应用领域
美国微芯 - MICROCHIP 光电二极管逻辑集成电路
页数 文件大小 规格书
4页 52K
描述
OR/NOR Gate, 10EL Series, 1-Func, 2-Input, ECL, PDSO8, 0.150 INCH, SOIC-8

SY10EL12VZI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP, SOP8,.25
针数:8Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.3
系列:10ELJESD-30 代码:R-PDSO-G8
JESD-609代码:e0长度:4.93 mm
逻辑集成电路类型:OR/NOR GATE湿度敏感等级:1
功能数量:1输入次数:2
端子数量:8最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240电源:-5.2 V
传播延迟(tpd):0.45 ns认证状态:Not Qualified
座面最大高度:1.73 mm子类别:Other Logic ICs
表面贴装:YES技术:ECL
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:3.94 mmBase Number Matches:1

SY10EL12VZI 数据手册

 浏览型号SY10EL12VZI的Datasheet PDF文件第2页浏览型号SY10EL12VZI的Datasheet PDF文件第3页浏览型号SY10EL12VZI的Datasheet PDF文件第4页 
SY10EL12  
SY100EL12  
FINAL  
LOW-IMPEDANCE  
DRIVER  
FEATURES  
DESCRIPTION  
The SY10/100EL12 are low-impedance drive buffers.  
With two pairs of OR/NOR outputs, the devices are ideally  
suited for high drive applications such as memory  
addressing. These devices are functionally equivalent to  
the E112 devices, with higher performance capabilities.  
With propagation delays significantly faster than the E112,  
the EL12 is ideally suited for those applications which  
require the ultimate in AC performance.  
290ps propagation delay  
Dual outputs for 25drive applications  
Internal 75Kinput pull-down resistors  
Available in 8-pin SOIC package  
PIN NAMES  
PIN CONFIGURATION/BLOCK DIAGRAM  
Pin  
D0, D1  
Qa, Qb  
Function  
Data Inputs  
Data Outputs  
Q
Q
a
b
VCC  
1
2
8
7
D
D
0
1
Q
Q
a
b
3
4
6
5
V
EE  
SOIC  
TOP VIEW  
Rev.: F  
Amendment:/0  
Issue Date: February 2003  
1

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