Datasheet > SXUV100

SXUV100

更新时间： 2024-11-16 12:31:03

品牌	Logo	应用领域
OPTODIODE		光电二极管光电二极管
页数	文件大小	规格书
2页	240K
描述
PHOTODIODE 100 mm

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SXUV100 数据手册

PHOTODIODE 100 mm²

SXUV100

FEATURES

• Single active area

• Detection to 1 nm

• Stable response after exposure

to EUV/UV conditions

• Protective cover plate

Dimensions are in inch [metric] units.

ELECTRO-OPTICAL CHARACTERISTICS AT 25°C

PARAMETERS

Active Area

TEST CONDITIONS

MIN

TYP

100

MAX

UNITS

mm²

10 mm x 10 mm

(see graph on next page)

@ ± 10 mV

Responsivity, R

Shunt Resistance, Rsh

Reverse Breakdown Voltage, V_R

Capacitance, C

MOhms

Volts

I_R= 1 µA

V_R= 0V

Response Time, tr

RL = 50Ω , V_R= 15V

250

nsec

THERMAL PARAMETERS

STORAGE AND OPERATING TEMPERATURE RANGE

Ambient

-10° TO 40°C

-20°C TO 80°C

70°C

Nitrogen or Vacuum

Maximum Junction Temperature

Lead Soldering Temperature¹

¹0.08" from case for 10 seconds

260°C

750 Mitchell Road, Newbury Park, California 91320

Phone: (805) 499-0335, Fax: (805) 499-8108

Email: sales@optodiode.com, Website: www.optodiode.com

Revision February 26, 2013

中文翻译

下载PDF

与SXUV100相关器件

型号	品牌	获取价格	描述	数据表
SXUV20HS1	OPTODIODE	获取价格	PHOTODIODE 05 mm
SXUV300C	OPTODIODE	获取价格	PHOTODIODE 331 mm
SXUV5	OPTODIODE	获取价格	PHOTODIODE 2.5 mm
SXUVPS4C	OPTODIODE	获取价格	QUADRANT PHOTODIODE 5 mm
SXV2N6659	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 1.4A I(D), 35V, 1-Element, N-Channel, Silicon, Metal
SXV2N6660	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 1.1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
SXV2N6661	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.9A I(D), 90V, 1-Element, N-Channel, Silicon, Metal
SXVN0104N2	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.8A I(D), 40V, 1-Element, N-Channel, Silicon, Metal
SXVN0104N9	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 40V, 1-Element, N-Channel, Silicon, Metal
SXVN0106N2	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal