Datasheet > SWB100N03

SWB100N03

更新时间： 2024-11-24 08:57:39

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
5页	506K
描述
N-channel MOSFET

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数据手册

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SWB100N03 数据手册

SAMWIN

SW100N03

N-channel MOSFET

BV_DSS: 30V

Features

TO-220 TO-251 TO-252 TO-263

I_D

: 100A

■ High ruggedness

■ R_DS(ON)(Max 5.3mΩ)@V_GS=10V

■ Gate Charge (Typ 146nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

R_DS(ON): 5.3 mΩ

1. Gate 2. Drain 3. Source

General Description

This N-channel enhancement mode field-effect power transistor using SAMWIN

semiconductor’s advanced planar stripe, DMOS technology intended for battery

Operated systems like a DC-DC converter motor control , ups ,audio amplifier.

Also, especially designed to minimize R_DS(ON), low gate charge and high rugged

avalanche characteristics.

Order Codes

Item

Sales Type

SW P 100N03

SW I 100N03

SW D 100N03

SW B 100N03

Marking

Package

TO-220

TO-251

TO-252

TO-263

Packaging

SW100N03

TUBE

REEL

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V_DSS

I_D

Drain to Source Voltage

Continuous Drain Current

Drain current pulsed

100

I_DM

(note 1)

(note 2)

400

V_GS

E_AS

Gate to Source Voltage

± 20

Single pulsed Avalanche Energy

Total power dissipation (@T_C=25^oC)

Derating Factor above 25^oC

875

100

P_D

T_STG, T_J

T_L

0.67

W/^oC

^oC

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

^oC

Thermal characteristics

Value

Typ.

Symbol

Parameter

Unit

Min.

Max.

1.5

R_thjc

R_thcs

R_thja

Thermal resistance, Junction to case

Thermal resistance, Case to Sink

^oC/W

0.5

Thermal resistance, Junction to ambient

62.5

Jun. 2011. Rev. 2.0

1/5

12 3 4 5

中文翻译

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