Datasheet > SUM09MN20-270

SUM09MN20-270

更新时间： 2024-01-07 04:49:49

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	41K
描述
N-Channel 200-V (D-S) 175C MOSFET

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SUM09MN20-270 数据手册

SUM09N20-270

Vishay Siliconix

New Product

N-Channel 200-V (D-S) 175_C MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFETS

D 175_C Junction Temperature

V_(BR)DSS(V)

r_DS(on)(W)

I_D(A)

D New Low Thermal Resistance Package

0.270 @ V = 10 V

200

0.300 @ V = 6 V

8.5

TO-263

D S

Top View

Ordering Information: SUM09N20-270

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

200

Unit

Drain-Source Voltage

Gate-Source Voltage

"20

= 25_C

= 125_C

5.2

Continuous Drain Current (T = 175_C)

Pulsed Drain Current

Avalanche Current

Repetitive Avalanche Energy

L = 0.1 mH

2.45

= 25_C

Maximum Power Dissipation

= 25_C

3.75

Operating Junction and Storage Temperature Range

T , T

-55 to 175

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

Junction-to-Ambient (PCB Mount)

thJA

thJC

C/W

Junction-to-Case (Drain)

2.5

Notes

a. Duty cycle v 1%.

b. See SOA curve for voltage derating.

c. When mounted on 1” square PCB (FR-4 material).

Document Number: 72158

S-03414—Rev. A, 03-Mar-03

www.vishay.com

12 3 4 5

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