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STY34NB50F PDF预览

STY34NB50F

更新时间: 2024-02-23 02:43:06
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
8页 90K
描述
N - CHANNEL 500V - 0.11ohm - 34 A - Max247 PowerMESH MOSFET

STY34NB50F 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:MAX247, 3 PIN针数:3
Reach Compliance Code:compliant风险等级:5.81
Is Samacsys:N其他特性:AVALANCHE RATED
雪崩能效等级(Eas):1000 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (Abs) (ID):34 A
最大漏极电流 (ID):34 A最大漏源导通电阻:0.14 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):450 W
最大脉冲漏极电流 (IDM):136 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STY34NB50F 数据手册

 浏览型号STY34NB50F的Datasheet PDF文件第2页浏览型号STY34NB50F的Datasheet PDF文件第3页浏览型号STY34NB50F的Datasheet PDF文件第4页浏览型号STY34NB50F的Datasheet PDF文件第5页浏览型号STY34NB50F的Datasheet PDF文件第6页浏览型号STY34NB50F的Datasheet PDF文件第7页 
STY34NB50F  
N - CHANNEL 500V - 0.11- 34 A - Max247  
PowerMESH MOSFET  
TYPE  
VDSS  
RDS(on)  
ID  
STY34NB50F  
500 V  
< 0.14 Ω  
34 A  
TYPICAL RDS(on) = 0.11 Ω  
EXTREMELY HIGH dv/dt CAPABILITY  
± 30V GATE TO SOURCE VOLTAGE RATING  
100% AVALANCHE TESTED  
LOW INTRINSIC CAPACITANCE  
GATE CHARGE MINIMIZED  
3
REDUCED VOLTAGE SPREAD  
2
1
DESCRIPTION  
Using the latest high voltage MESH OVERLAY  
process, STMicroelectronics has designed an ad-  
vanced family of power MOSFETs with outstand-  
ing performances. The new patent pending strip  
layout coupled with the Company’s proprietary  
edge termination structure, gives the lowest  
RDS(on) per area, exceptional avalanche and  
dv/dt capabilities and unrivalled gate charge and  
switching characteristics.  
Max247  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITCH MODE POWER SUPPLY (SMPS)  
DC-AC CONVERTER FOR WELDING  
EQUIPMENTAND UNINTERRUPTABLE  
POWER SUPPLY AND MOTOR DRIVE  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDGR  
VGS  
ID  
Parameter  
Value  
500  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
V
V
500  
± 30  
34  
V
o
Drain Current (continuous) at Tc = 25 C  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
A
ID  
21.4  
136  
A
IDM( )  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
450  
W
Derating Factor  
3.61  
4.5  
W/oC  
V/ns  
oC  
oC  
dv/dt(1) Peak Diode Recovery voltage slope  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
( ) ISD 34 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX  
1
1/8  
December 1999  

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