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STX25NM60ND PDF预览

STX25NM60ND

更新时间: 2024-01-10 19:17:04
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
18页 597K
描述
N-channel 600 V, 0.13 Ω, 21 A FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247

STX25NM60ND 数据手册

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STx25NM60ND  
N-channel 600 V, 0.13 , 21 A FDmesh™ II Power MOSFET  
D2PAK, I2PAK, TO-220FP, TO-220, TO-247  
Features  
VDSS  
TJMAX  
@
Type  
RDS(on) max  
ID  
3
3
1
3
2
2
1
1
STB25NM60ND  
STI25NM60ND  
STF25NM60ND  
STP25NM60ND  
STW25NM60ND  
21 A  
21 A  
D2PAK  
TO-220  
TO-220FP  
650 V  
0.16 Ω  
21 A(1)  
21 A  
21 A  
1. Limited only by maximum temperature allowed  
3
2
3
2
1
1
The worldwide best R  
*area amongst the  
I2PAK  
TO-247  
DS(on)  
fast recovery diode devices  
100% avalanche tested  
Low input capacitance and gate charge  
Low gate input resistance  
Figure 1.  
Internal schematic diagram  
Extremely high dv/dt and avalanche  
capabilities  
Application  
Switching applications  
Description  
The FDmesh™ II series belongs to the second  
generation of MDmesh™ technology. This  
revolutionary Power MOSFET associates a new  
vertical structure to the company's strip layout  
and associates all advantages of reduced on-  
resistance and fast switching with an intrinsic fast-  
recovery body diode.It is therefore strongly  
recommended for bridge topologies, in ZVS  
phase-shift converters.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STB25NM60ND  
STI25NM60ND  
STF25NM60ND  
STP25NM60ND  
STW25NM60ND  
25NM60ND  
25NM60ND  
25NM60ND  
25NM60ND  
25NM60ND  
PAK  
PAK  
Tape and reel  
Tube  
TO-220FP  
TO-220  
TO-247  
Tube  
Tube  
Tube  
March 2009  
Rev 4  
1/18  
www.st.com  
18  

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