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STTH1003SG PDF预览

STTH1003SG

更新时间: 2024-11-25 08:58:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管瞄准线功效
页数 文件大小 规格书
7页 91K
描述
HIGH EFFICIENCY RECTIFIER

STTH1003SG 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-263包装说明:R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.74Is Samacsys:N
其他特性:LOW LEAKAGE CURRENT, LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e3最大非重复峰值正向电流:100 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):245认证状态:Not Qualified
最大重复峰值反向电压:300 V最大反向恢复时间:0.035 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

STTH1003SG 数据手册

 浏览型号STTH1003SG的Datasheet PDF文件第2页浏览型号STTH1003SG的Datasheet PDF文件第3页浏览型号STTH1003SG的Datasheet PDF文件第4页浏览型号STTH1003SG的Datasheet PDF文件第5页浏览型号STTH1003SG的Datasheet PDF文件第6页浏览型号STTH1003SG的Datasheet PDF文件第7页 
STTH1003S  
®
HIGH EFFICIENCY RECTIFIER  
Table 1: Main Product Characteristics  
A
K
A
IF(AV)  
VRRM  
trr (typ)  
Tj  
10 A  
300 V  
13 ns  
175°C  
0.9 V  
K
VF (typ)  
A
K
A
A
K
A
FEATURES AND BENEFITS  
D2PAK  
STTH1003SG  
TO-220FPAB  
STTH1003SFP  
Ultrafast recovery  
Low power losses  
High surge capability  
Low leakage current  
High junction temperature  
K
A
K
A
DPAK  
STTH1003SB  
DESCRIPTION  
The STTH1003S is an Ultrafast Recovery Power  
Rectifier dedicated to energy recovery in PDP  
application.  
It is especially designed for clamping function in  
energy recovery block.  
The compromise between forward voltage drop  
and recovery time offer optimized performances.  
Table 2: Order Codes  
Part Numbers  
STTH1003SFP  
STTH1003SB  
STTH1003SB-TR  
STTH1003SG  
Marking  
STTH1003SFP  
STTH1003SB  
STTH1003SB  
STTH1003SG  
STTH1003SG  
STTH1003SG-TR  
Table 3: Absolute Ratings (limiting values)  
Symbol  
Parameter  
Value  
Unit  
VRRM Repetitive peak reverse voltage  
IF(RMS) RMS forward voltage  
300  
V
A
A
A
20  
10  
IF(AV) Average forward current  
Tc = 150°C δ = 0.5  
IFSM  
IRSM  
Tstg  
Tj  
Surge non repetitive forward current  
tp = 10ms sinusoidal  
tp = 20 µs square  
100  
Non repetitive avalanche current  
Storage temperature range  
4
A
-65 to + 175  
175  
°C  
°C  
Maximum operating junction temperature  
August 2005  
REV. 1  
1/8  

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