Datasheet > STSJ20NM20N

STSJ20NM20N

更新时间： 2024-09-27 23:35:23

品牌	Logo	应用领域
其他 - ETC		晶体栅极晶体管开关脉冲光电二极管
页数	文件大小	规格书
6页	127K
描述
N-CHANNEL 200V 0.11 OHM 20A POWERSO-8 ULTRA LOW GATE CHARGE MDMESH II MOSFET

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中文翻译

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STSJ20NM20N 数据手册

STSJ20NM20N

N-CHANNEL 200V - 0.11Ω - 20A PowerSO-8™

ULTRA LOW GATE CHARGE MDmesh™II MOSFET

TARGET DATA

TYPE

DSS

DS(on)

STSJ20NM20N

200 V

< 0.13 Ω

20 A

■

WORLDWIDE LOWEST GATE CHARGE

TYPICAL R (on) = 0.11 Ω

HIGH dv/dt AND AVALANCHE CAPABILITIES

LOW INPUT CAPACITANCE

LOW GATE RESISTANCE

TIGHT PROCESS CONTROL AND HIGH

MANUFACTORING YIELDS

PowerSO-8

DESCRIPTION

This 200V MOSFET with a new advanced layout

brings all unique advantages of MDmesh technolo-

gy to lower voltages. The device exhibits worldwide

lowest gate charge for any given on-resistance.Its

use is therefore ideal as primary switch in isolated

DC-DC converters for Telecom and Computer appli-

cations.Used in combination with secondary-side

low-voltage STripFET^TMproducts, it contributes to

reducing losses and boosting efficiency.The ex-

posed slug reduced the Rthj-c improving the current

capability

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

DRAIN CONTACT ALSO ON THE BACKSIDE

The MDmesh™ family is very suitable for increasing

power density allowing system miniaturization and

higher efficiencies.

ORDERING INFORMATION

SALES TYPE

MARKING

PACKAGE

PACKAGING

STSJ20NM20N

SJ20NM20N

PowerSO-8

TAPE & REEL

June 2003

1/6

12 3 4 5 6

中文翻译

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