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STPS30SM80C PDF预览

STPS30SM80C

更新时间: 2024-11-24 12:23:11
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意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
11页 123K
描述
Power Schottky rectifier

STPS30SM80C 数据手册

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STPS30SM80C  
Power Schottky rectifier  
Features  
A1  
K
High junction temperature capability  
A2  
Optimized trade-off between leakage current  
K
K
and forward voltage drop  
Low leakage current  
A2  
Avalanche capability specified  
A2  
K
Insulated package TO-220FPAB  
– insulated voltage: 2000 V  
A1  
D2PAK  
STPS30SM80CG-TR  
A1  
I2PAK  
– package capacitance: 45 pF  
STPS30SM80CR  
K
Description  
This dual diode Schottky rectifier is suited for high  
frequency switch mode power supply.  
A1  
K
A2  
K
A2  
2
2
A1  
Packaged in TO-220AB, I PAK, D PAK and TO-  
220FPAB, this device is particularly suited for use  
in notebook, game station, LCD TV and desktop  
adapters, providing these applications with a  
good efficiency at both low and high load.  
TO-220AB  
TO-220FPAB  
STPS30SM80CFP  
STPS30SM80CT  
(a)  
Figure 1.  
Electrical characteristics  
Table 1.  
Device summary  
Symbol  
IF(AV)  
VRRM  
I
V
I
Value  
"Forward"  
2 x 15 A  
80 V  
2 x I  
O
X
I
F
Tj (max)  
VF (typ)  
175 °C  
515 mV  
I
O
X
V
AR  
RRM  
V
R
V
V
I
R
V
V
V
V
F F(2xI  
F(I  
)
)
o
To  
o
"Reverse"  
I
AR  
a. VARM and IARM must respect the reverse safe  
operating area defined in Figure 13. VAR and IAR are  
pulse measurements (tp < 1 µs). VR, IR, VRRM and VF,  
are static characteristics  
April 2011  
Doc ID 018727 Rev 1  
1/11  
www.st.com  
11  

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