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STPS20150CR-H PDF预览

STPS20150CR-H

更新时间: 2024-09-23 12:58:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 高压高电压电源
页数 文件大小 规格书
7页 112K
描述
150V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, I2PAK-3

STPS20150CR-H 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:ROHS COMPLIANT, PLASTIC, I2PAK-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.74
Is Samacsys:N其他特性:LOW LEAKAGE CURRENT
应用:HIGH VOLTAGE POWER外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:R-PSIP-T3最大非重复峰值正向电流:180 A
元件数量:2相数:1
端子数量:3最高工作温度:175 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:150 V
最大反向电流:5 µA子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

STPS20150CR-H 数据手册

 浏览型号STPS20150CR-H的Datasheet PDF文件第2页浏览型号STPS20150CR-H的Datasheet PDF文件第3页浏览型号STPS20150CR-H的Datasheet PDF文件第4页浏览型号STPS20150CR-H的Datasheet PDF文件第5页浏览型号STPS20150CR-H的Datasheet PDF文件第6页浏览型号STPS20150CR-H的Datasheet PDF文件第7页 
STPS20150CT/CG/CR/CFP  
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
A1  
A2  
K
IF(AV)  
VRRM  
Tj  
2 x 10 A  
150 V  
175°C  
0.75 V  
K
VF (max)  
K
FEATURES AND BENEFITS  
A2  
A2  
K
A1  
A1  
D2PAK  
STPS20150CG  
HIGH JUNCTION TEMPERATURE CAPABILITY  
I2PAK  
STPS20150CR  
GOOD TRADE OFF BETWEEN LEAKAGE  
CURRENT AND FORWARD VOLTAGE DROP  
LOW LEAKAGE CURRENT  
AVALANCHE CAPABILITY SPECIFIED  
DESCRIPTION  
A2  
A2  
Dual center tap schottky rectifier designed for  
high frequency Switched Mode Power  
Supplies.  
K
A1  
K
A1  
TO-220FPAB  
TO-220AB  
STPS20150CT  
STPS20150CFP  
ABSOLUTE RATINGS (limiting values, per diode)  
Symbol  
Parameter  
Value  
150  
30  
Unit  
V
VRRM Repetitive peak reverse voltage  
IF(RMS) RMS forward current  
A
IF(AV)  
Average forward current TO-220AB  
δ = 0.5  
D2PAK / I2PAK  
Tc = 155°C Per diode  
10  
A
TO-220FPAB  
Surge non repetitive forward current  
PARM Repetitive peak avalanche power  
Tc = 135°C Per device  
tp = 10 ms sinusoidal  
tp = 1µs Tj = 25°C  
20  
180  
IFSM  
A
W
6700  
Tstg  
Tj  
Storage temperature range  
- 65 to + 175  
175  
°C  
Maximum operating junction temperature  
°C  
dV/dt Critical rate of rise of reverse voltage  
10000  
V/µs  
July 2003 - Ed: 6D  
1/7  

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