Datasheet > STPS160H100

STPS160H100

更新时间： 2024-09-27 23:35:19

品牌	Logo	应用领域
其他 - ETC		高压高电压电源
页数	文件大小	规格书
5页	117K
描述
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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STPS160H100 数据手册

STPS160H100TV

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

2 x 80 A

100 V

Tj (max)

V_F(max)

150 °C

0.68 V

FEATURES AND BENEFITS

NEGLIGIBLE SWITCHING LOSSES

HIGH JUNCTION TEMPERATURE CAPABILITY

LOW LEAKAGE CURRENT

GOOD TRADE OFF BETWEEN LEAKAGE

CURRENT AND FORWARD VOLTAGE DROP

AVALANCHE RATED

ISOTOP^TM

LOW INDUCTION PACKAGE

INSULATED PACKAGE:

Insulating Voltage = 2500 V_(RMS)

Capacitance = 45 pF

AVALANCHE CAPABILITY SPECIFIED

DESCRIPTION

High voltage dual Schottky rectifier designed

for high frequency telecom and computer

Switched Mode Power Supplies and other

power converters.

Packaged in ISOTOP, this device is intended for

use in medium voltage operation, and particu-

larly, in high frequency circuitries where low

switching losses and low noise are required.

ABSOLUTE RATINGS (limiting values, per diode)

Symbol

Parameter

Repetitive peak reverse voltage

Value

100

Unit

V_RRM

I_F(RMS)RMS forward current

180

I_F(AV)

Average forward current

Tc = 110°C

δ = 0.5

Per diode

Per device

160

I_FSM

I_RRM

I_RSM

P_ARM

T_stg

Surge non repetitive forward current

Repetitive peak reverse current

Non repetitive peak reverse current

Repetitive peak avalanche power

Storage temperature range

tp = 10 ms sinusoidal

tp = 2 µs square F = 1kHz

tp = 100 µs square

1000

tp = 1µs Tj = 25°C

78400

-55 to+150 °C

Maximum operating junction temperature *

Critical rate of rise of reverse voltage

150

°C

dV/dt

10000

V/µs

dPtot

* :

thermal runaway condition for a diode on its own heatsink

dTj

Rth(j − a)

July 2003 - Ed: 3A

1/5

12 3 4 5

中文翻译

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