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STP5NC50FP PDF预览

STP5NC50FP

更新时间: 2024-01-02 16:10:29
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲高压局域网
页数 文件大小 规格书
12页 535K
描述
N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh⑩II MOSFET

STP5NC50FP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.61
Is Samacsys:N其他特性:HIGH VOLTAGE
雪崩能效等级(Eas):280 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):5.5 A最大漏极电流 (ID):5.5 A
最大漏源导通电阻:1.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):245
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):35 W
最大脉冲漏极电流 (IDM):22 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STP5NC50FP 数据手册

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STP5NC50 - STP5NC50FP  
STB5NC50 - STB5NC50-1  
N-CHANNEL 500V - 1.3- 5.5A TO-220/FP/D2PAK/I2PAK  
PowerMesh™II MOSFET  
TYPE  
V
DSS  
R
I
D
DS(on)  
STP5NC50  
STP5NC50FP  
STB5NC50  
STB5NC50-1  
500 V  
500 V  
500 V  
500 V  
< 1.5Ω  
< 1.5Ω  
< 1.5Ω  
< 1.5Ω  
5.5A  
5.5A  
5.5A  
5.5A  
3
1
2
TYPICAL R (on) = 1.3Ω  
DS  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
NEW HIGH VOLTAGE BENCHMARK  
GATE CHARGE MINIMIZED  
D PAK  
TO-220FP  
TO-220  
3
2
1
2
DESCRIPTION  
I PAK  
The PowerMESHII is the evolution of the first  
generation of MESH OVERLAY™. The layout re-  
finements introduced greatly improve the Ron*area  
figure of merit while keeping the device at the lead-  
ing edge for what concerns swithing speed, gate  
charge and ruggedness.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITH MODE POWER SUPPLIES (SMPS)  
DC-AC CONVERTERS FOR WELDING  
EQUIPMENT AND UNINTERRUPTIBLE  
POWER SUPPLIES AND MOTOR DRIVES  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
STP5NC50  
STP5NC50FP  
STB5NC50/-1  
V
Drain-source Voltage (V = 0)  
500  
500  
±30  
V
V
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
DGR  
GS  
V
Gate- source Voltage  
V
GS  
I
Drain Current (continuos) at T = 25°C  
5.5  
3.5  
22  
5.5(*)  
3.5(*)  
22  
A
D
C
I
Drain Current (continuos) at T = 100°C  
A
D
C
I
( )  
Drain Current (pulsed)  
A
DM  
P
Total Dissipation at T = 25°C  
100  
0.8  
35  
W
TOT  
C
Derating Factor  
0.28  
W/°C  
V/ns  
V
dv/dt(1)  
Peak Diode Recovery voltage slope  
Insulation Withstand Voltage (DC)  
3.5  
V
-
2500  
ISO  
T
T
stg  
Operating Junction Temperature  
Storage Temperature  
-55 to 175  
-65 to 175  
°C  
°C  
j
(*)Limited only by maximum temperature allowed  
(•)Pulse width limited by safe operating area  
(1)I 5.5A, di/dt 100A/µs, V V  
, T T  
j JMAX.  
SD  
DD  
(BR)DSS  
December 2002  
1/12  

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