Datasheet > STP5NC70ZFP

STP5NC70ZFP

更新时间： 2024-02-06 09:54:09

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	350K
描述
N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET

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STP5NC70ZFP 数据手册

STP5NC70Z - STP5NC70ZFP

STB5NC70Z - STB5NC70Z-1

N-CHANNEL 700V - 1.8Ω - 4.6A TO-220/FP/D²PAK/I²PAK

Zener-Protected PowerMESH™III MOSFET

TYPE

DSS

DS(on)

STP5NC70Z/FP

STB5NC70Z/-1

700V

< 2 Ω

4.6 A

■

TYPICAL R (on) = 1.8 Ω

EXTREMELY HIGH dv/dt AND CAPABILITY GATE

TO - SOURCE ZENER DIODES

D²PAK

TO-220

TO-220FP

■

100% AVALANCHE TESTED

VERY LOW GATE INPUT RESISTANCE

GATE CHARGE MINIMIZED

I²PAK

(Tabless TO-220)

DESCRIPTION

The third generation of MESH OVERLAY™ Power

MOSFETs for very high voltage exhibits unsurpassed

on-resistance per unit area while integrating back-to-

back Zener diodes between gate and source. Such ar-

rangement gives extra ESD capability with higher rug-

gedness performance as requested by a large variety

of single-switch applications.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

WELDING EQUIPMENT

■

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STP(B)5NC70Z(-1) STP5NC70ZFP

Drain-source Voltage (V = 0)

700

± 25

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

Drain Current (continuous) at T = 25°C

4.6

2.9

4.6(*)

2.9(*)

18.4

Drain Current (continuous) at T = 100°C

(1)

Drain Current (pulsed)

18.4

100

0.8

Total Dissipation at T = 25°C

TOT

Derating Factor

0.32

W/°C

V/ns

Gate-source Current

± 50

Gate source ESD(HBM-C=100pF, R=15KΩ)

Peak Diode Recovery voltage slope

Insulation Winthstand Voltage (DC)

Storage Temperature

ESD(G-S)

dv/dt

ISO

2000

stg

–65 to 150

150

°C

Max. Operating Junction Temperature

(1)Pulse width limited by safe operating area

December 2002

(● )I ≤4.5A, di/dt ≤100A/µs, V ≤ V

(*) Limited only by maximum temperature allowed

, T ≤ T

j JMAX

(BR)DSS

1/12

12 3 4 5 6 7...12

中文翻译

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